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首页> 外文期刊>Journal of materials science >A high sensitive and low detection limit of formaldehyde gas sensor based on hierarchical flower-like CuO nanostructure fabricated by sol-gel method
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A high sensitive and low detection limit of formaldehyde gas sensor based on hierarchical flower-like CuO nanostructure fabricated by sol-gel method

机译:基于层状花状CuO纳米结构的溶胶-凝胶法制备甲醛气体传感器的高灵敏度和低检测限

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摘要

The hierarchical flower-like CuO nanostructure was synthesized by a facile sol-gel method without template. Indirectly-heated sensors are fabricated by coating the sol-gel on ceramic tubes with signal electrodes and subsequent annealing. The obtained nanostructures are analyzed by X-ray diffraction and scanning electron microscopy. Their gas sensing performances were investigated. The results indicated that the sensor based on hierarchical flower-like CuO exhibited excellent sensing properties towards ethanol, formaldehyde, acetone and dimethylbenzene. The sensor based on the CuO exhibited the optimal gas sensing performance, giving a ppb-level detection limit and a high response (R_g/R_a) of 1.378 to 50 ppb formaldehyde at 250 ℃. The response and recovery time of the flower-like CuO nanostructure sensor are 11.9 and 8.4 s, respectively. The significantly enhanced sensing properties to formaldehyde could be attributed to the changes in crystallite size and specific surface area. The results indicate that the hierarchical flower-like CuO nanostructure gas sensor can be a simple and useful platform for formaldehyde and other volatile organic compounds sensing application.
机译:通过简便的溶胶-凝胶法合成无模板的花状CuO纳米结构。间接加热的传感器是通过将溶胶-凝胶涂在带有信号电极的陶瓷管上并随后进行退火来制造的。通过X射线衍射和扫描电子显微镜分析获得的纳米结构。研究了他们的气体传感性能。结果表明,基于层状花状CuO的传感器对乙醇,甲醛,丙酮和二甲苯具有良好的传感性能。基于CuO的传感器表现出最佳的气体感测性能,在250℃时具有ppb级的检测限和1.378至50 ppb甲醛的高响应(R_g / R_a)。花状CuO纳米结构传感器的响应时间和恢复时间分别为11.9和8.4 s。对甲醛的显着增强的感测特性可归因于微晶尺寸和比表面积的变化。结果表明,分层的花状CuO纳米结构气体传感器可以成为甲醛和其他挥发性有机化合物传感应用的简单有用的平台。

著录项

  • 来源
    《Journal of materials science》 |2016年第7期|6766-6772|共7页
  • 作者单位

    Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 222 Tianshui South Road, Lanzhou 730000, Gansu Province, China;

    Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 222 Tianshui South Road, Lanzhou 730000, Gansu Province, China;

    Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 222 Tianshui South Road, Lanzhou 730000, Gansu Province, China;

    Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 222 Tianshui South Road, Lanzhou 730000, Gansu Province, China;

    Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 222 Tianshui South Road, Lanzhou 730000, Gansu Province, China;

    Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 222 Tianshui South Road, Lanzhou 730000, Gansu Province, China;

    Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 222 Tianshui South Road, Lanzhou 730000, Gansu Province, China;

    Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 222 Tianshui South Road, Lanzhou 730000, Gansu Province, China;

    Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 222 Tianshui South Road, Lanzhou 730000, Gansu Province, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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