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Dielectric properties and energy storage behaviors in ZnNb_2O_6-doped Sr_(0.97)Nd_(0.02)TiO_3 ceramics

机译:ZnNb_2O_6掺杂Sr_(0.97)Nd_(0.02)TiO_3陶瓷的介电性能和储能性能

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摘要

Using the solid-state ceramic route, Sr_(0.97)Nd_(0.02)TiO_3 ceramics with addition of ZnNb_2O_6 were prepared, and the phase purity, microstructure, dielectric property and energy-storage performance were investigated. The XRD results suggest the formation of solid solutions for all the studied compositions. The SEM results show the moderate addition of ZnNb_2O_6 improves the sintering densification and microstructure of the ceramic samples. The breakdown strength (BDS) is notably improved due to the reduction of the grain size and dense uniform microstructure. And the highest BDS of 493 kV/ cm can be achieved for the sample with 6 wt% ZnNb_2O_6 additive. The Sr_(0.97)Nd_(0.02)TiO_3 ceramic with 6.0 wt% ZnNb_2O_6 addition shows the maximum theoretical energy-storage density of 2.37 J/cm~3, which is 3.4 times higher than that of pure SrTiO_3 in the literature. Therefore, the ZnNb_2O_6 doped Sr_(0.97)Nd_(0.02)TiO_3 ceramics might be a kind of promising energy storage dielectric material.
机译:采用固态陶瓷路线,制备了添加ZnNb_2O_6的Sr_(0.97)Nd_(0.02)TiO_3陶瓷,研究了相纯度,微观结构,介电性能和储能性能。 XRD结果表明所有研究的组合物均形成固溶体。 SEM结果表明,适量添加ZnNb_2O_6可改善陶瓷样品的烧结致密化和微观结构。击穿强度(BDS)由于晶粒尺寸的减小和致密均匀的微观结构而得到显着改善。含有6%ZnNb_2O_6添加剂的样品可以实现493 kV / cm的最高BDS。添加了6.0 wt%ZnNb_2O_6的Sr_(0.97)Nd_(0.02)TiO_3陶瓷的最大理论储能密度为2.37 J / cm〜3,是文献中纯SrTiO_3的3.4倍。因此,掺杂ZnNb_2O_6的Sr_(0.97)Nd_(0.02)TiO_3陶瓷可能是一种很有前途的储能介电材料。

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  • 来源
    《Journal of materials science》 |2016年第4期|3759-3764|共6页
  • 作者单位

    Guangxi Key Laboratory of Information Materials, College of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China;

    Guangxi Key Laboratory of Information Materials, College of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China;

    Guangxi Key Laboratory of Information Materials, College of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China;

    Guangxi Key Laboratory of Information Materials, College of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China;

    Guangxi Key Laboratory of Information Materials, College of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China;

    Guangxi Key Laboratory of Information Materials, College of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China;

    Guangxi Key Laboratory of Information Materials, College of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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