首页> 外文期刊>Journal of materials science >Effect of ZnO-B_2O_3-SiO_2 glass additive on magnetic properties of low-sintering Li_(0.43)Zn_(0.27)Ti_(0.13)Fe_(2.17)O_4 ferrites
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Effect of ZnO-B_2O_3-SiO_2 glass additive on magnetic properties of low-sintering Li_(0.43)Zn_(0.27)Ti_(0.13)Fe_(2.17)O_4 ferrites

机译:ZnO-B_2O_3-SiO_2玻璃添加剂对低烧结Li_(0.43)Zn_(0.27)Ti_(0.13)Fe_(2.17)O_4铁氧体磁性能的影响

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摘要

ZBS glasses (0.125-2.0 wt%) composed of ZnO-B_2O_3-SiO_2 were added into the LiZnTi (Li_(0.43) Zn_(0.27)Ti_(0.13)Fe_(2.17)O_4) ferrites to achieve low temperature sintering. Variations in microstructure, bulk density and ferromagnetic properties of the ferrites along with the changes of ZBS glasses concentration were discussed and analyzed in detail. Results suggest that LiZnTi ferrites mixed with appropriate amount of ZBS glass possess high saturation magnetization intensity, low coercivity, and low ferromagnetic resonance line width. Although this sintering process was completed at a low temperature (~ 900 ℃), the ferrites still kept relatively good magnetic properties. Thus, the ZBS glass is a promising additive for low temperature sintering of LiZnTi ferrites.
机译:将由ZnO-B_2O_3-SiO_2组成的ZBS玻璃(0.125-2.0 wt%)添加到LiZnTi(Li_(0.43)Zn_(0.27)Ti_(0.13)Fe_(2.17)O_4)铁氧体中以实现低温烧结。讨论并详细分析了铁素体的微观结构,堆积密度和铁磁性能的变化以及ZBS玻璃浓度的变化。结果表明,掺有适量ZBS玻璃的LiZnTi铁氧体具有高饱和磁化强度,低矫顽力和低铁磁共振线宽。尽管该烧结过程是在低温(〜900℃)下完成的,但铁氧体仍保持相对良好的磁性能。因此,ZBS玻璃是用于LiZnTi铁氧体低温烧结的有前途的添加剂。

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  • 来源
    《Journal of materials science》 |2016年第1期|811-817|共7页
  • 作者单位

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China;

    Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, USA;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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  • 入库时间 2022-08-17 13:44:38

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