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Improvements in thermo-mechanical and rheological properties of SiO_2/epoxy composites using different types of SiO_2

机译:使用不同类型的SiO_2改善SiO_2 /环氧树脂复合材料的热机械和流变性能

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摘要

Single-size 400 nm-SiO_2 and multi-size 1 and 5 μm-SiO_2 were used as fillers in epoxy matrix. The fillers with the larger particle size and multi-size SiO_2 particles mixing is beneficial to lower the viscosity and increase the filler loading. Among the composites, the 60 wt% 5 um-SiO_2 epoxy composite has the best properties with both low coefficients of thermal expansion (CTE) of 28.8 ppm/℃ and low viscosity of ~ 50 Pa s, which shows its capability to achieve the required low CTE and viscosity values in the electronic packaging. Different theoretical proposals were used to estimate the CTE. Maxwell-Garnett equation fits the experimental data well. In addition, the mixture law and Bruggeman effective medium theory offer the upper and lower limits to the CTE.
机译:单一尺寸的400 nm-SiO_2和多重尺寸的1和5μm-SiO_2被用作环氧基质中的填料。具有较大粒径和多种尺寸SiO_2颗粒混合的填料有利于降低粘度和增加填料含量。在复合材料中,60 wt%5 um-SiO_2环氧复合材料具有最佳性能,同时具有28.8 ppm /℃的低热膨胀系数(CTE)和低至〜50 Pa s的低粘度,这表明其具有达到要求的能力。电子包装中的CTE和粘度值低。使用了不同的理论建议来估算CTE。 Maxwell-Garnett方程非常适合实验数据。此外,混合定律和布鲁格曼有效介质理论为CTE提供了上限和下限。

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  • 来源
    《Journal of materials science 》 |2016年第1期| 503-511| 共9页
  • 作者单位

    Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong, China;

    Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong, China;

    Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong, China;

    Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong, China;

    Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong, China;

    Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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