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首页> 外文期刊>Journal of materials science >One-pot synthesis of CTAB stabilized mesoporous cobalt doped CuS nano flower with enhanced pseudocapacitive behavior
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One-pot synthesis of CTAB stabilized mesoporous cobalt doped CuS nano flower with enhanced pseudocapacitive behavior

机译:一锅合成CTAB稳定的介孔钴掺杂CuS纳米花,具有增强的假电容行为

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摘要

In this study, we prepared porous CuS and Cobalt (Co) doped copper sulfide (CuS) nano flower by hydrothermal route. Cationic surfactant cetyl trimethyl ammonium bromide (CTAB) was used as stabilizer and copper nitrate, cobalt nitrate as precursors, thiourea as sulfur source and ethylene glycol as solvent. Structural, functional, optical properties, morphological, surface area and chemical nature of the as-synthesized samples were thoroughly characterized by XRD, FTIR, UV-Vis, SEM/EDS, TEM, BET and XPS techniques respectively. The optical band gap of CuS and Cobalt doped CuS nano flowers was estimated between 1.9 and 2.52 eV. The scanning electron microscopy and transmission electron microscopy images demonstrate flower like nanostructures with length around 140 nm. Then the synthesized samples were utilized for electrochemical performance to modify the glassy carbon electrode (GCE). The electrochemical performance of the as-synthesized CTAB/CuS and CTAB/Cobalt (0.15 mM) doped CuS material was studied by cyclic voltammetry and electrical impedance spectroscopy. These results demonstrate that CTAB/cobalt doped CuS electrode delivered a high specific capacitance of 586.45 Fg~(-1) in a2M KOH aqueous electrolyte at 5 mV/s and indicating their potential application as promising electrode materials for supercapacitors.
机译:在这项研究中,我们通过水热法制备了多孔的CuS和钴(Co)掺杂的硫化铜(CuS)纳米花。阳离子表面活性剂十六烷基三甲基溴化铵(CTAB)用作稳定剂,硝酸铜,硝酸钴作为前体,硫脲作为硫源,乙二醇作为溶剂。分别通过XRD,FTIR,UV-Vis,SEM / EDS,TEM,BET和XPS技术对合成样品的结构,功能,光学性质,形态,表面积和化学性质进行了全面表征。 CuS和钴掺杂的CuS纳米花的光学带隙估计在1.9和2.52 eV之间。扫描电子显微镜和透射电子显微镜图像显示了花状的纳米结构,其长度约为140 nm。然后,将合成的样品用于电化学性能以修饰玻璃碳电极(GCE)。通过循环伏安法和电阻抗谱研究了合成的CTAB / CuS和CTAB /钴(0.15 mM)掺杂CuS材料的电化学性能。这些结果表明,CTAB /钴掺杂的CuS电极在5mV / s的a2M KOH水性电解质中提供了586.45 Fg〜(-1)的高比电容,并表明了它们潜在的应用前景,有望成为超级电容器的电极材料。

著录项

  • 来源
    《Journal of materials science 》 |2017年第20期| 15387-15397| 共11页
  • 作者单位

    Department of Physics, Annamalai University, Annamalai Nagar, Chidambaram, Tamilnadu 608002, India;

    Department of Physics, Annamalai University, Annamalai Nagar, Chidambaram, Tamilnadu 608002, India;

    Department of Physics (DDE Wings), Annamalai University, Annamalai Nagar, Chidambaram, Tamilnadu 608002, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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