Indium-surfactant-assisted epitaxial growth of semi-polar plane Al_(0.42)Ga_(0.58)N films

摘要

The semi-polar (1122) plane Al_(0.42)Ga_(0.58)N films were successfully grown on (1010) -oriented m-plane sapphire substrates for the first time with an indium (ln)-surfactant-assisted metal-organic chemical vapor deposition (MOCVD) technology. The crystal orientation, surface morphology, and electrical properties of the grown semi-polar (1122) plane AlGaN epi-layers were characterized with high-resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM), and Hall effect measurements, respectively. The XRD scanning results showed that crystalline quality for the semi-polar (1122) plane AlGaN epi- layer was improved with In-surfactant. The AFM results demonstrated that the root mean square value of the semi-polar AlGaN epi-layer samples decreased with increasing the TMIn mole flow rate. Furthermore, the native electron concentration of the unintentionally doped semi-polar (1122) plane AlGaN epi-layers was decreased from 2.66X1017 to 2.97X1016 cm~(-3) due to the significant decrease in nitrogen vacancies (V_N) with indium-surfactant-assisted growth process.