Behavior of carrier transports and their sensitivity to solar irradiation for devices that use MoS_2 that is directly deposited on Si using the chemical vapor method

摘要

To fabricate a MoS_2/Si device, layers of MoS_2 are directly deposited on an n-type Si substrate by chemical vapor deposition (CVD). No transfer processes are needed. The MoS_2 thin film that is deposited on the n-type Si substrate exhibits p-type behavior and the MoS_2/Si device exhibits stable rectification behavior. It is found that the thermionic emission-diffusion model is the dominant process in this fabricated MoS_2/Si device. The MoS_2/Si device also exhibits high sensitivity to solar irradiation. Because of the low reflectance values for the MoS_2/Si samples, the enhanced sensitivity is due to high external light injection efficiency. This study provides valuable scientific information for multiple layered MoS_2 films for other electronic and optoelectronic applications.