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Investigation of Ni influence on structural and band gap tuning of Zn_(0.98)Mn_(0.02)S quantum dots by co-precipitation method

机译:共沉淀法研究Ni对Zn_(0.98)Mn_(0.02)S量子点结构和带隙调谐的影响

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摘要

Zn_(0.98-x)Ni_xMn_(0.02)S (x = 0, 0.02, 0.04) quantum dots have been synthesized by using simple co-precipitation method. The synthesized samples were characterized using various analytical tools to monitor optimum properties. X-ray diffraction analysis revealed that the materials had cubic crystal structure as well as phase purity. The average crystallite size was determined within the range of 1.3 to 1.8 nm using Debye Scherer equation. The microscopic studies showed the smooth surface passivation and agglomeration of particles. Energy Dispersive X-ray analysis ensured the existence of compositional elements, Zn, Ni, Mn and S in the synthesized samples within the stoi-chiometry ratio. UV-Visible absorption and transmittance studies and band gap estimation were taken from optical studies. The optical studies showed the red shift in absorption and elevation of intensity by increasing Ni concentration. The band gap of the samples was found to be in the range of 3.56-3.93 eV (red shift) because of the exchange interactions between Zn (3d10) and localized d electrons of Mn (3d5) and Ni (3d8). From the observation of linear red shift of band gap, substantial absorption and low transmittance by Ni incorporation, this material can be chosen as a suitable applicant for the optoelectronic device applications and as a buffer material for the solar cell applications. FTIR spectrum report confirmed the presence of the dopant into the ZnS host lattice and chemical bonding corresponding to each elements in the prepared samples.
机译:使用简单的共沉淀法合成了Zn_(0.98-x)Ni_xMn_(0.02)S(x = 0,0.02,0.04)量子点,并使用各种分析工具对合成的样品进行了表征,以监测最佳性能。衍射分析表明该材料具有立方晶体结构和相纯度,使用Debye Scherer方程确定平均晶粒尺寸在1.3至1.8 nm范围内,微观研究表明颗粒具有光滑的表面钝化和团聚作用。 X射线分析可确保合成样品在化学计量比之内存在锌,镍,锰和硫的组成元素,并通过光学研究进行了紫外可见吸收和透射率研究以及带隙估计。镍浓度增加引起的吸收和强度升高的红移,样品的带隙在3.56-3.93 eV范围内(红移)因为Zn(3d10)与Mn(3d5)和Ni(3d8)的局部d电子之间存在交换相互作用。从观察到的带隙线性红移,掺入镍引起的大量吸收和低透射率,可以将该材料选择为光电子器件应用的合适申请人和太阳能电池应用的缓冲材料。 FTIR光谱报告证实了掺杂剂存在于ZnS主晶格中,并且化学键与制备样品中的每种元素相对应。

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  • 来源
    《Journal of materials science》 |2017年第11期|8309-8315|共7页
  • 作者

    P. Sakthivel; S. Muthukumaran;

  • 作者单位

    Mount Zion College of Engineering and Technology,Pudukkottai, Tamil Nadu 622507, India;

    PG and Research Department of Physics, Government Arts College, Melur, Tamil Nadu 625106, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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