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首页> 外文期刊>Journal of materials science >Preparation and characterization of PI/PVDF composite films with excellent dielectric property
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Preparation and characterization of PI/PVDF composite films with excellent dielectric property

机译:具有优异介电性能的PI / PVDF复合膜的制备与表征

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摘要

All-organic polyimide (PI)/poly(vinylidene fluoride) (PVDF) composite materials with high dielectric constant and low dielectric loss were fabricated via solution blending. The dielectric, mechanical, and thermal properties of the PI/PVDF composite films were studied. Results indicated that the dielectric properties of the composites were highly reinforced through the introduction of PVDF, and the composites exhibited excellent thermal stability. When the mass fraction of PVDF was adjusted to 30 wt%, the specimen demonstrated excellent thermal properties, superior mechanical properties, high dielectric constant (5.7, 1 kHz), and low dielectric loss (0.009, 1 kHz). Moreover, the dependence of the dielectric constant and dielectric loss on frequency was investigated. The composite presented stable dielectric constant and dielectric loss that were less than 0.04 within the testing frequency range of 100 Hz-10 MHz. This study demonstrated that the PI/PVDF composites were potential dielectric materials in the field of electronics.
机译:通过溶液共混制备了具有高介电常数和低介电损耗的全有机聚酰亚胺(PI)/聚偏二氟乙烯(PVDF)复合材料。研究了PI / PVDF复合膜的介电,机械和热性能。结果表明,通过引入PVDF可以高度增强复合材料的介电性能,并且复合材料具有出色的热稳定性。将PVDF的质量分数调整为30 wt%时,样品表现出优异的热性能,优异的机械性能,高介电常数(5.7,1 kHz)和低介电损耗(0.009,1 kHz)。此外,研究了介电常数和介电损耗对频率的依赖性。在100 Hz-10 MHz的测试频率范围内,复合材料的稳定介电常数和介电损耗小于0.04。这项研究表明,PI / PVDF复合材料是电子领域中潜在的介电材料。

著录项

  • 来源
    《Journal of materials science》 |2017年第5期|4088-4094|共7页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China. Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China. Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China. Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China. Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China. Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China. Chengdu 610054, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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