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首页> 外文期刊>Journal of materials science >Studies of structural, dielectric and electrical characteristics of BaTiO_3-BiFeO_3-CaSnO_3 electronic system
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Studies of structural, dielectric and electrical characteristics of BaTiO_3-BiFeO_3-CaSnO_3 electronic system

机译:BaTiO_3-BiFeO_3-CaSnO_3电子系统的结构,介电和电学特性研究

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摘要

The polycrystalline sample of CaSnO~(3)modified BiFeO~(3)–BaTiO~(3)with a composition 0.85BaTiO~(3)–0.1BiFeO~(3)–0.05CaSnO~(3)(hereafter BTO–BFO–CSO-5) was fabricated by a cost effective ceramic technology. The crystal system and unit cell dimensions of the prepared system were obtained by analyzing the room temperature X-ray spectra or pattern, and found to be an orthorhombic phase. The scanning electron micrograph shows the formation of the high-density ceramic sample. Resistive (impedance, modulus and electrical transport) and insulating (dielectric) properties of the system have been obtained using dielectric and the impedance spectroscopy at various frequencies (10_(2)–10_(6)Hz) and temperatures (25–450 °C). The Nyquist plots exhibit the presence of the effect of grains in the prepared sample. The electrical transport properties of the material can be explained with the help of charge transfer by hopping process. The complex electrical modulus plot is used to determine the dielectric relaxation. The frequency dependence of conductivity plot follows the universal Jonscher power law.
机译:CaSnO〜(3)改性的BiFeO〜(3)–BaTiO〜(3)的多晶样品,其组成为0.85BaTiO〜(3)–0.1BiFeO〜(3)–0.05CaSnO〜(3)(以下称为BTO–BFO– CSO-5)是通过具有成本效益的陶瓷技术制造的。通过分析室温X射线光谱或图案获得了所制备系统的晶体系统和晶胞尺寸,发现是正交相。扫描电子显微镜照片显示了高密度陶瓷样品的形成。使用电介质和阻抗谱在各种频率(10_(2)–10_(6)Hz)和温度(25-450°C)下获得了系统的电阻(阻抗,模量和电传输)和绝缘(电介质)特性)。奈奎斯特图显示了所制备样品中存在晶粒效应。材料的电传输特性可以借助跳跃过程的电荷转移来解释。复数模量曲线用于确定介电弛豫。电导率图的频率依赖性遵循通用的Jonscher幂定律。

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  • 来源
    《Journal of materials science 》 |2018年第9期| 7876-7884| 共9页
  • 作者单位

    Department of Electronics and Instrumentation, Siksha “O” Anusandhan (Deemed to be University);

    Department of Physics, Siksha “O” Anusandhan (Deemed to be University);

    Department of Electrical and Electronics, Siksha “O” Anusandhan (Deemed to be University);

    Department of Pure and Applied Physics, Guru Ghasidas Central University;

    Department of Electrical and Electronics, Siksha “O” Anusandhan (Deemed to be University);

    Department of Physics, Siksha “O” Anusandhan (Deemed to be University);

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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