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Effect of doping of Nal monovalent cation halide on the structural, morphological, optical and optoelectronic properties of MAPbI_3 perovskite

机译:纳尔一价阳离子卤化物的掺杂对MAPbI_3钙钛矿结构,形貌,光学和光电性能的影响

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摘要

AbstractPerovskite materials offer a compelling combination of low-cost and extraordinary optical and electronic properties. The optoelectronic properties of the CH3NH3PbI3perovskite can be further improved by doping other ions. Here, we prepared the perovskite films in one-step method from a precursor solution containing a mixture of MAI, PbI2, and NaI (where MA stands for methylammonium cations) for a PbI2/MAI molar ratio of 1.08 to investigate influence of NaI-doping in perovskite on the structural and optoelectronic properties of CH3NH3PbI3perovskite. Measurements based on UV–visible absorption spectrum and photoluminescence, reveal slight blue shift compared to pure MAPbI3. This experiment demonstrated that the pure MAPbI3films were shown to be n-type and the electronic conductivity of MAPbI3can be changed from n-type to p-type by doping Na+cation. The hole concentration and Hall mobility of the NaI based perovskites exhibit an increase of up to an order of magnitude in the hole concentration with a significant decrease in the mobility compared to the pristine perovskite. These results indicate possibility of modulating semiconductor properties of CH3NH3PbI3perovskite.
机译: Abstract 钙钛矿材料提供了低成本,非凡的光学和电子特性的出色组合。掺杂其他离子可以进一步提高CH 3 NH 3 PbI 3 钙钛矿的光电性能。在这里,我们通过一步法从包含MAI,PbI 2 和NaI(其中MA代表甲基铵阳离子)的PbI 2 <的混合物的前体溶液中制备钙钛矿薄膜。 / Subscript> / MAI摩尔比为1.08,以研究钙钛矿中NaI掺杂对CH 3 NH 3 PbI 3 的结构和光电性能的影响下标>钙钛矿。与纯MAPbI 3 相比,基于紫外可见吸收光谱和光致发光的测量显示出轻微的蓝移。实验表明,纯MAPbI 3 薄膜显示为n型,通过掺杂可以将MAPbI 3 的电导率从n型改变为p型。 Na <上标> + 阳离子。与原始钙钛矿相比,基于NaI的钙钛矿的空穴浓度和霍尔迁移率显示出空穴浓度的增加高达一个数量级,而迁移率显着降低。这些结果表明有可能调节CH 3 NH 3 PbI 3 钙钛矿的半导体性能。

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  • 来源
    《Journal of materials science》 |2018年第1期|205-210|共6页
  • 作者单位

    Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, Ministry of Education Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, Beijing Information Science and Technology University;

    Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, Ministry of Education Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, Beijing Information Science and Technology University;

    Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, Ministry of Education Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, Beijing Information Science and Technology University;

    Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, Ministry of Education Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, Beijing Information Science and Technology University;

    Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, Ministry of Education Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, Beijing Information Science and Technology University;

    Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, Ministry of Education Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, Beijing Information Science and Technology University;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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