Deposit on different back contacts: to high-quality CulnGaS_2 thin films for photovoltaic application

摘要

Cu(In,Ga)Se_2 (CIGS) absorber layer for photovoltaic application was successfully deposited by different substrate, indium tin oxide (ITO), fluorine-doped tin oxide (FTO) and molybdenum (Mo) after optimization of the operating parameters of the deposited films. The structural, morphological, optical and electrical properties of the CIGS films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The inter-planar distance between the planes is estimated at 0.36 nm. Atomic force microscopy (AFM) samples deposited on Mo had the highest level of 751 nm for roughness compared to other samples. High absorbance and low transmittance are observed for films prepared with a shot interval energy of about 1.6 eV. Optical constants such as the refractive index (n), the extinction coefficient (k), the real part (ε_r) and the imaginary part (ε_i) of the dielectric constant were extracted from the data of absorb-ance/transmittance. The optoelectronic properties of this CuInGaS_2 material make it advisable to use it for the manufacture of more efficient solar panels.