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首页> 外文期刊>Journal of materials science >Solution-produced copper iodide thin films for photosensor and for vertical thermoelectric nanogenerator, which uses a spontaneous temperature gradient
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Solution-produced copper iodide thin films for photosensor and for vertical thermoelectric nanogenerator, which uses a spontaneous temperature gradient

机译:溶液生产的碘化铜薄膜,用于光电传感器和垂直热电纳米发生器,使用自发温度梯度

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The article presents a new design of vertical thermoelectric nanogenerator (TENG) on the base of thin-film CuI/FTO composition with ohmic Cr/Cu contacts, which combines the functions of UV-Visible photosensor. Its functioning as the TENG carried out due to the spontaneous temperature gradient approximately 7 K, which occurs under the uniform heating of the entire device at temperature 30 degrees C. The open circuit voltage of TENG test sample is V-oc = 0.09 mV and maximum output power is P-max = 0.4 nW at temperature 50 degrees C. UV-Visible photosensor based on Cu/Cr/CuI/FTO/Cr/Cu composition possess high values of photocurrents I-ph under illumination, which eliminates necessity of amplification of the photosensor signal. The photoresponse and reset times of the photosensor are tau(p) approximate to 30-100 s and tau(r) approximate to 20-100 s, respectively. The explanation of the possibility of using CuI thin films, solution-produced by the affordable successive ionic layer adsorption and reaction (SILAR) method as both thermoelectric and photosensitive material is based on the studying of surface morphology, crystal structure, chemical composition and optical properties.
机译:本文介绍了一种新型的垂直热电纳米发生器(TENG),其基于具有欧姆Cr / Cu触点的薄膜CuI / FTO成分,结合了紫外可见光传感器的功能。由于大约7 K的自发温度梯度(在整个器件在30摄氏度的温度下均匀加热)而产生的TENG的作用。TENG测试样品的开路电压为V-oc = 0.09 mV,最大值在50摄氏度的温度下,输出功率为P-max = 0.4 nW。基于Cu / Cr / CuI / FTO / Cr / Cu成分的紫外可见光传感器在光照下具有很高的光电流I-ph值,从而无需进行放大光电传感器信号。光电传感器的光响应时间和重置时间分别为tau(p)约30-100 s和tau(r)约20-100 s。通过对表面形态,晶体结构,化学成分和光学性质的研究,可以解释通过可负担的连续离子层吸附和反应(SILAR)方法将溶液生产的CuI薄膜用作热电和光敏材料的可能性。 。

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