Enhanced energy storage property and dielectric tunability of Na_(0.5)Bi_(0.5)(Ti,W,Ni)O_3 thin film on Bi(Fe,Mn)O_3 buffered LaNiO_3(100)/Si substrate

摘要

Na~(0.5)Bi~(0.5)(Ti,W,Ni)O~(3)(NBTWN) thin films were fabricated on the pure and Bi(Fe,Mn)O~(3)buffered Pt/TiO~(2)/SiO~(2)/Si and LaNiO~(3)(100)/Si substrates by chemical solution deposition, respectively. The crystallization, surface morphology, and electrical properties of the four films are mainly investigated. The films, which are grown on the Pt/TiO~(2)/SiO~(2)/Si substrates, exhibit similar polycrystalline structure. Whereas for films deposited on the LaNiO~(3)(100)/Si substrates, strong ( l 00) orientations are observed. Compared with the NBTWN film on pure Pt/TiO~(2)/SiO~(2)/Si, the introduction of Bi(Fe,Mn)O~(3)buffer layer and LaNiO~(3)oxide electrode can promote the grain growth of the NBTWN resulting in larger grain size. Large remanent polarization and breakdown strength can be observed in films with Bi(Fe,Mn)O~(3)buffer layers. Furthermore, the combination of low leakage current and good energy storage capacity, together with high dielectric tunability is achieved in NBTWN/Bi(Fe,Mn)O~(3)/LaNiO~(3)(100)/Si heterostructure. The enhancement in electrical properties may be attributed to the preferred crystalline orientation and optimized grain size depending on both the buffer layer and the electrode that are used.