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Eco-friendly and non-toxic thin film solar cell employing spray pyrolysed p-CZTS and n-SnS:Cu-a novel approach

机译:采用喷雾热解p-CZTS和n-SnS:Cu的环保无毒薄膜太阳能电池

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摘要

n-Type SnS:Cu thin films are fabricated using chemical spray pyrolysis and are used successfully for solar cell device fabricationwith the configuration ITO/CZTS/SnS:Cu/ZnO:Al/Ag for the first time. The device has high open-circuit voltage (V-oc) of 810mV, short circuit current density (J(sc)) of 0.87mA/cm(2), fill factor (FF) of 51% and an efficiency of 0.36%. Similar device structure is not reported so far. Even though the J(sc) obtained is less, we could achieve a good V-oc and FF value which are comparable with the parameters obtained for well established solar devices. The structural, morphological, electrical and optical properties of SnS:Cu films used for the cell fabrication are studied using X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, Scanning electron microscopy, Hall measurements and UV-Vis-NIR spectroscopy. The oxygen concentration is decreased from 49 to 8% as the Sulfur concentration is increased and hence proved that adjustment of precursor ratio is a very effective method to control the oxygen content of the samples, which is a determining factor in the performance of the device. This work suggests an easily adoptable method for preparing n-type SnS:Cu thin films favorable for device fabrication by varying tin to sulphur ratio.
机译:n型SnS:Cu薄膜是使用化学喷雾热解法制备的,并首次成功用于配置ITO / CZTS / SnS:Cu / ZnO:Al / Ag的太阳能电池器件制造中。该器件的开路电压(V-oc)为810mV,短路电流密度(J(sc))为0.87mA / cm(2),填充因数(FF)为51%,效率为0.36%。到目前为止,尚未报告类似的设备结构。即使获得的J(sc)较小,我们也可以获得良好的V-oc和FF值,这些值与为完善的太阳能设备获得的参数相当。使用X射线衍射,X射线光电子能谱,拉曼光谱,扫描电子显微镜,霍尔测量和UV-Vis-NIR光谱研究了用于电池制造的SnS:Cu膜的结构,形态,电学和光学性质。随着硫浓度的增加,氧浓度从49%降低到8%,因此证明了调节前体比率是控制样品中氧含量的一种非常有效的方法,这是设备性能的决定因素。这项工作提出了一种易于采用的方法,该方法可通过改变锡​​硫比来制备有利于器件制造的n型SnS:Cu薄膜。

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