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首页> 外文期刊>Journal of Materials Science & Technology >Solid State Synthesis and Thermoelectric Properties of Mg-Si-Ge System
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Solid State Synthesis and Thermoelectric Properties of Mg-Si-Ge System

机译:Mg-Si-Ge体系的固相合成及其热电性能

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摘要

Thermoelectric materials, Mg_2Si_(1-x)Ge_x (x=0, 0.2, 0.4, 0.6, 0.8, 1), have been prepared by bulk mechanical alloying (BMA) and hot pressing (HP). The electrical conductivity, Seebeck coefficient and thermal conductivity were measured from room temperature up to about 700 K. The electrical conductivity of all the samples increases with increasing temperature, while the Seebeck coefficient and thermal conductivity decrease with increasing temperature. Mg_2Si and Mg_2Si_(0.8)Ge_(0.2) possess negative type of conductivity, while for other compounds it is positive. At the same time, the effect of hot processing condition on thermoelectric properties was also investigated. The maximum figure of merit of Mg_2Si_(0.6)Ge_(0.4) was obtained with the processing parameter of BMA at 600 cycles and hot pressing at 773 K and 1 GPa for 1 h.
机译:通过块体机械合金化(BMA)和热压(HP)制备了热电材料Mg_2Si_(1-x)Ge_x(x = 0、0.2、0.4、0.6、0.8、1)。电导率,塞贝克系数和热导率是在室温至约700 K的温度下测量的。所有样品的电导率均随温度升高而增加,而塞贝克系数和导热率随温度升高而降低。 Mg_2Si和Mg_2Si_(0.8)Ge_(0.2)具有负电导率类型,而对于其他化合物,它为正电导率。同时,还研究了热处理条件对热电性能的影响。在600个周期的BMA处理参数下,在773 K和1 GPa下热压1 h,得到了Mg_2Si_(0.6)Ge_(0.4)的最高性能指标。

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