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首页> 外文期刊>Journal of Materials Science: Materials in Electronics >Synthesis and characterization of copper telluride nanowires via template-assisted dc electrodeposition route
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Synthesis and characterization of copper telluride nanowires via template-assisted dc electrodeposition route

机译:模板辅助直流电沉积路线合成碲化铜纳米线及其表征

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摘要

Using polycarbonate track-etch membranes (Whatman), copper telluride (Cu1.75Te) nanowires of diameter 100 nm and 50 nm have been synthesized electrochemically via template-assisted electrodeposition technique on indium tin oxide (ITO) coated glass from aqueous acidic solution of copper (II) sulphate (CuSO4·5H2O) and tellurium oxide (TeO2) at room temperature (30 °C). Scanning electron microscopy (SEM) reveals the morphology of the nanowires having uniform diameter equal to the diameter of the template used. X-ray diffraction (XRD) pattern showed the structure corresponding to the hexagonal structure of copper telluride and single-crystalline. Using UV–visible spectrometry, the optical band gap of copper telluride nanowires was found to be 3.092 eV for 100 nm and 3.230 eV for 50 nm diameters. The photoluminescence (PL) studies shows higher intensity and broad spectrum in the blue region (450–475 nm) of visible light spectrum.
机译:使用聚碳酸酯轨迹蚀刻膜(Whatman),通过模板辅助电沉积技术在涂有氧化铟锡(ITO)的材料上电化学合成了直径为100 nm和50 nm的碲化铜(Cu 1.75 Te)纳米线室温下由硫酸铜(II)(CuSO 4 ·5H 2 O)和氧化碲(TeO 2 )的酸性水溶液制成的玻璃(30°C)。扫描电子显微镜(SEM)揭示了具有均匀直径等于所用模板直径的纳米线的形态。 X射线衍射(XRD)图谱显示对应于碲化铜和单晶的六边形结构的结构。使用紫外可见光谱法,发现碲化铜纳米线的光学带隙对于100 nm直径为3.092 eV,对于50 nm直径为3.230 eV。光致发光(PL)研究显示可见光光谱的蓝色区域(450-475 nm)具有更高的强度和更宽的光谱。

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