BaRuO_3 thin film electrode for ferroelectric lead zirconate titanate capacitors

摘要

The characteristics of a ferroelectric Pb(Zr_0.52Ti_0.48)O_3(PZT) capacitor on conductive BaRuO_3, thin films deposited by pulsed laser deposition (PLD) were investigated. The BaRuO_3, layer grown epitaxially on LaAlO_3,(l00) substrates at a substrate temperature of 700 deg. C was found to have a resistivity around l45 mu Ω cm at 300 K. The subsequently deposited PZT film showed a c-axis orientation perpendicular to the