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首页> 外文期刊>Journal of Materials Research >Photoluminescence spectra of undoped and Sm~3+ -doped BaAl_2S_4 and BaAl_2Se_4 single crystals
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Photoluminescence spectra of undoped and Sm~3+ -doped BaAl_2S_4 and BaAl_2Se_4 single crystals

机译:未掺杂和Sm〜3 +掺杂的BaAl_2S_4和BaAl_2Se_4单晶的光致发光光谱

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摘要

Undoped and Sm~3+ -doped BaAl_2S_4 and BaAl_2Se_4 single crystals were grown by the chemical transport reaction method. The optical energy band gaps of the BaAl_2S_4 and BaAl_2Se_4 were found to be 4.10 and 3.47 eV, respectively, at 5 K. In their photoluminescence spectra measured at 5 K, broad emission peaks at 459 and 601 nm appeared in the BaAl_2S_4 and at 486 and 652 nm in the BaAl_2Se_4. These emissions are assigned to donor-acceptor pair recombinations. Sharp emission peaks were observed in the Sm~3+ -doped BaAl_2S_4 and BaAl_2Se_4 single crystals at 5 K. Taking into account the ionic radii of the cations and Sm~3+, these sharp emission peaks are attributed to the electron transitions between the energy levels of Sm~3+ substituting with the Ba site.
机译:通过化学传输反应法生长了未掺杂和Sm〜3 +掺杂的BaAl_2S_4和BaAl_2Se_4单晶。 BaAl_2S_4和BaAl_2Se_4的光能带隙在5 K下分别为4.10和3.47 eV。在5 K下测得的光致发光光谱中,BaAl_2S_4和486和BaAl_2S_4处出现了459和601 nm的宽发射峰。 BaAl_2Se_4中为652 nm。这些发射被分配给供体-受体对复合。在5 K掺杂Sm〜3 +的BaAl_2S_4和BaAl_2Se_4单晶中观察到尖锐的发射峰。考虑到阳离子和Sm〜3 +的离子半径,这些尖锐的发射峰归因于能量之间的电子跃迁。 Ba位取代了Sm〜3 +的水平。

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