Ferroelectric property of epitaxial Bi_4Ti_3O_12 films prepared by metalorganic chemical vapor deposition

摘要

The orientation dependence of the ferroelectricity of epitaxially grown Bi_4Ti_3O_12 thin films was investigated. The (001)-, (118)-, and (104)-oriented Bi_4Ti_3O_12 films were epitaxially grown on (100)c CaRuO_3//(100)SrTiO_3, (110)cSrRuO_3//(110)SrTiO_3, and (111)c SrRuO_3//(111)SrTiO_3 substrates, respectively, by metalorganic chemical vapor deposition. Ferroelectric property with different magnitude was observed for (001)- and (118)-oriented films but for (104)-oriented film due to its large leakage current. The remanent polarization and the coercive field were 1.5 μC/cm~2 for (001)- and And (118)-oriented films but for (104)-oriented film due to its large leakage current. The remanent polarization and the coercive field were 1.5 μC/cm~2 and 15 kV/cm, 16.5 μC/cm~2 and 132 kV/cm for the (001)- and (118)-oriented thin films, respectively.