首页> 外文期刊>Journal of Materials Research >Ferroelectric domains in coarse-grained lead zirconate titanate ceramics characterized by scanning force microscopy
【24h】

Ferroelectric domains in coarse-grained lead zirconate titanate ceramics characterized by scanning force microscopy

机译:扫描力显微镜表征粗晶钛酸锆钛酸铅陶瓷中的铁电畴

获取原文
获取原文并翻译 | 示例
           

摘要

Ferroelectric domain configurations in silver- and lanthanum-doped lead zirconate titanate (PZT) ceramics were characterized by scanning force microscopy using contact as well as piezoelectric response force [i.e., piezoelectric force microscopy (PFM)] modes. Coarse crystallites of hard and soft PZT ceramics (12 μm in Ag-PZT and 30 μm in La-PZT average grain size, respectively) with surface oriented in the {001} planes were chosen to characterize the domain configuration. Results show the conventional right-angled domain structures, which correspond to the {110} twin-related 90° and 180° domains of homogeneous width from 50 to 150 nm. The ability of PFM to image the orientation of pure in-plane arrays of domains (containing 90°-aa- and 180°-aa-types of domain boundaries) is highlighted, and a more detailed notation for in-plane domains is proposed. In addition to such periodical domain arrays, other ordered domains were found, having a misfit of 26? with respect to the {110} domain walls and the {100} surface. This array of domain walls could not be predicted with a geometrical analysis of the intersection of domain walls at the surface according to the conventional spatial array of {110} crystallographic planes. It could be explained only with {210} planes being the domain walls. The reason for this unconventional domain configuration is explained with the clamped conditions of the investigated crystallites in the polycrystalline material.
机译:通过使用接触以及压电响应力[即,压电力显微镜(PFM)]模式的扫描力显微镜,对银和镧掺杂的钛酸锆钛酸铅(PZT)陶瓷中的铁电畴结构进行了表征。选择硬质和软质PZT陶瓷(分别在Ag-PZT中为12μm和La-PZT平均晶粒度为30μm)的粗微晶,其表面取向在{001}平面中,以表征畴结构。结果显示了常规的直角畴结构,其对应于{110}孪生相关的90°和180°畴,其均匀宽度为50至150 nm。 PFM能够对域的纯平面内阵列的方向(包含90°-aa-和180°-aa型域边界)进行成像,并提出了更详细的平面内域标记。除了这些定期域数组外,还发现了其他有序域,其错配为26?。相对于{110}畴壁和{100}表面。根据{110}晶体平面的常规空间阵列,不能通过表面处的畴壁的相交的几何分析来预测该畴壁的阵列。只能用{210}平面作为畴壁来解释。用多晶材料中所研究的微晶的夹持条件解释了这种非常规畴结构的原因。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号