机译:脉冲激光沉积在缓冲硅基板上PbZr_(0.52)Ti_(0.48)O_3薄膜的生长,表征和电性能
NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, Greensboro, North Carolina 27411;
机译:通过化学溶液沉积在SrRuO_3缓冲的镍和硅衬底上生长的Pb_(0.92)La_(0.08)Zr_(0.52)Ti_(0.48)O_3薄膜的电性能
机译:脉冲激光沉积法在TiO_2封端的SrTiO_3(100)上PbZr_(0.52)Ti_(0.48)O_3 / SrRuO_3结构的异外延生长和铁电性能
机译:改善溅射PB_(1.10)的电性能(Zr_(0.52),Ti_(0.48))O_3 / PB_(1.25)(Zr_(0.52),Ti_(0.48))O_3多层薄膜
机译:外延PBZR_(0.52)Ti_(0.48)O_3和BATIO_3在SRRUO_3 / SRTIO_3(100)底板上制备的BATIO_3薄膜的结构和铁电性能
机译:通过正交交叉束脉冲激光沉积在硅上外延取向氮化钛薄膜的生长和表征。
机译:控制性沉积条件下Pb(Zr0.52Ti0.48)O3薄膜的压电响应和玻璃上的纳米片缓冲层
机译:研究更新:通过脉冲激光沉积在硅上沉积的外延pb0.9La0.1(Zr0.52Ti0.48)O3弛豫铁电薄膜的储能密度和能量效率得到提高