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首页> 外文期刊>Journal of Materials Research >Morphology and electrical transport in pentacene films on silylated oxide surfaces
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Morphology and electrical transport in pentacene films on silylated oxide surfaces

机译:硅烷化氧化物表面并五苯薄膜的形貌和电传输

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摘要

A study comparing the morphology and electrical transport properties of pentacene films on underlayers of different self-assembled monolayers (SAMs) is presented. The SAMs studied as underlayers were phenyltrichlorosilane, n-octadecyltrichlorosilane, and t-butyldiphenylchlorosilane. Pentacene thin films were grown by vacuum sublimation on SiO_2 surfaces treated with self-assembled monolayers. During deposition, substrates were held at a temperature of 70 deg C. The morphologies of the films at different stages of deposition were studied by atomic force microscopy, and the transport properties of the films were characterized by I-V measurements in a simple field-effect transistor (FET) structure. The SAM underlayers strongly influence the film morphology in the first few molecular layers and hence significantly impact the electrical transport in the resulting FETs.
机译:提出了一项研究,比较了不同自组装单分子膜(SAMs)上并五苯薄膜的形貌和电传输性质。作为底层研究的SAM是苯基三氯硅烷,正十八烷基三氯硅烷和叔丁基二苯基氯硅烷。通过真空升华在经自组装单层处理的SiO_2表面上生长并五苯薄膜。在沉积过程中,将基板保持在70摄氏度的温度下。通过原子力显微镜研究膜在不同沉积阶段的形貌,并通过简单的场效应晶体管中的IV测量来表征膜的传输特性(FET)结构。 SAM底层对前几个分子层的膜形态有很大影响,因此会显着影响所得FET中的电传输。

著录项

  • 来源
    《Journal of Materials Research 》 |2004年第7期| p.2003-2007| 共5页
  • 作者单位

    Center for Thin Film Devices, Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学 ;
  • 关键词

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