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机译:多元醇介导的盘状(ZnSe)_2·EN前体的制备及其向准网络结构的ZnSe晶体的转化
Department of Chemistry and Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, People's Republic of China;
机译:GaAs-(Ge)2)_(1-x)(ZnSe)_x,Ge-(Ge_2)_(1-x)(ZnSe)_x,GaP-(Ge_2)_(1-x)(ZnSe)的晶体完善)_x,Si-(Ge_2)_(1-x)(ZnSe)_x异质结构
机译:GaAs-(Ge)2)_(1-x)(ZnSe)_x,Ge-(Ge_2)_(1-x)(ZnSe)_x,GaP-(Ge_2)_(1-x)(ZnSe)的晶体完善)_x,Si-(Ge_2)_(1-x)(ZnSe)_x异质结构
机译:GaAs - (Ge)2)_(1-x)(znse)_x,ge - (ge_2)_(1-x)(znse)_x,gap - (ge_2)_(1-x)(znse )_x,si - (ge_2)_(1-x)(znse)_x异质结构
机译:ZnSe / GaAs(100)薄层ZnS-ZnSe-ZnS / GaAs(100)单量子阱结构和光辅助VPE生长的ZnS / ZnSe / GaAs(100)超晶格
机译:开发用于可见光激光器和发光二极管的宽带隙II-VI材料。 A. ZnMgCdSe结构的双极掺杂和电致发光。 B.六角形ZnSe基结构
机译:制备参数对深蓝色发光的影响基于纳米结构ZNSE / ZNS多层薄膜的二极管
机译:基于ZnSe的纳米晶体的RGB光排放:Znse,ZnSe:Cu和ZnSe:Mn