Kinetics of borosilicate glass deposition

摘要

The kinetics of borosilicate glass film deposition on silicon using boron nitride as a solid source was investigated. Experimental data on the thickness of deposited films as a function of temperature and process times under controlled atmospheric conditions was obtained. A 33-kW rapid thermal processing infrared furnace was used to minimize temperature and gas phase transients experienced on the commercial scale. The thickness and composition of the borosilicate glass films were measured using scanning Auger spectroscopy, and the thickness of the films as a function of time for various temperatures are presented. The results suggest a rapid transition to diffusion-controlled deposition with an activation energy of 2.77 +- 0.5 eV. The partial pressure of water vapor was found to have a potentially significant effect on the rate of film growth.