Influence of electrode modification by Ar~+ ion beam upon passivation and electrical characteristics in organic light-emitting diodes

摘要

Ion-beam-assisted deposition (IBAD) was used for cathode preparation in organic light-emitting diodes to fabricate dense electrode. Dark spot growth rate was decreased by employing the IBAD process due to a highly packed aluminum structure inhibiting the permeation of H_2O and O_2. However, undesirable leakage current was generated because energetic particles of Al assisted by Ar~+ ion may damage the organic material resulting in reduction of contact resistance. The decrease of contact resistance in the IBAD device may be caused by large contact area, increase of density of states, and Li diffusion to phenyl-substituted poly-p-phenylene vinylene.