Synthesis of Si_2N_2O nanowires in porous Si_2N_2O-Si_3N_4 substrate using Si powder

摘要

The formation of synthesized Si_2N_2O nanowires using the process of Si nitridation depending on the addition of carbon was investigated. The diameter of the Si_2N_2O nanowires having a high aspect ratio of about 50-80 nm was found in the porous Si_2N_2O-Si_3N_4 substrate to which 6 wt% C was added. The synthesized Si_2N_2O nanowires had orthorhombic single-crystal structure covered with a thin (～2 nm thick) amorphous layer and a large number of stacking faults along the (200) plane. The photoluminescence spectrum of Si_2N_2O nanowires showed a strong, stable green emission at 540 nm.