Oxidation And Reduction Behavior Of Pure Indium

摘要

Fundamental knowledge on the oxidation behavior of pure indium, commonly used as a low-temperature, fluxless soldering material in micro-electro-mechanical system (MEMS) devices, is of importance as it influences the solder joint reliability. A thermodynamic model of the oxidation and reduction behavior of indium is developed by constructing an Ellingham diagram, and by using H_(2(g)) reactions. Partial pressure (p) of H_2O was shown to be the critical parameter in creating a reducing environment in the applicable solder reflow temperature range. Verification of the thermodynamic models was then carried out through heating and melting of indium in controlled glove box environments by adjusting p(H_2)/p(H_2O). The nanometer scale thickness of the oxide layer grown on indium was measured by a spectroscopic ellipsometer. The growth mechanism for oxidation in air below 220 ℃ follows Uhlig's logarithmic law where electron transport is the rate-controlling mechanism, implying that there is an incubation period for the onset of initial oxidation. Its activation energy was found to be 0.65 eV.