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Stress-strain behaviors of <110>-oriented Tb_(0.3)Dy_(0.7)Fe_(1.95) after magnetic annealing

机译:退火后<110>取向的Tb_(0.3)Dy_(0.7)Fe_(1.95)的应力应变行为

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摘要

Compressive stress-strain behaviors in a <110>-oriented crystal Tb_(0.3)Dy_(0.7)Fe_(1.95) after magnetic annealing have been investigated under a series of quasi-static magnetic fields, attempting to add more insight into the corresponding domain-switching process. The magnetically annealed crystal outputs larger final strains than the untreated one, although it exhibits similar stress-strain behaviors. An obvious improvement also occurs in the initial Young's modulus E_0 after magnetic annealing. The corresponding domain switching processes under compressive stress have been discussed. Non-180° domain processes are favored because of the specific initial domain states, which can be reflected by the shortening of the flat stage in magnetostriction-magnetic induction (λ-B) curve and the increase of the critical field where maximum forced magnetostriction constant d_(33) locates.
机译:在一系列准静态磁场下研究了<110>取向晶体Tb_(0.3)Dy_(0.7)Fe_(1.95)中的压缩应力-应变行为,试图在相应的静磁场中进行更多研究-切换过程。经磁退火的晶体比未处理的晶体输出更大的最终应变,尽管它表现出相似的应力应变行为。磁退火后的初始杨氏模量E_0也发生了明显的改善。已经讨论了在压缩应力下相应的域切换过程。非180°磁畴过程由于特定的初始磁畴状态而受到青睐,这可以通过缩短磁致伸缩磁感应(λ-B)曲线中的平坦阶段以及增加最大强制磁致伸缩常数的临界场来反映出来d_(33)定位。

著录项

  • 来源
    《Journal of Materials Research》 |2010年第7期|P.1371-1374|共4页
  • 作者单位

    Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

    rnDepartment of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

    rnDepartment of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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