机译:InP的纳米压痕和纳米刮擦过程中位错成核的发生分析
Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-3602 Thun, Switzerland;
Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-3602 Thun, Switzerland;
Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-3602 Thun, Switzerland;
Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Microengineering (IMT),Photovoltaics and Thin Film Electronics Laboratory, CH-2000 Neuchdtel, Switzerland;
机译:铁的纳米压痕和纳米划痕:位错产生和反应的原子模拟
机译:纳米压痕中位错成核与表面凹坑缺陷延迟效应的多尺度分析
机译:n-InP(100)的选择性蚀刻在纳米划痕引起的表面位错处触发
机译:基于Peierls-Nabarro位错模型的应力表面脱位环成核分析
机译:硅晶片纳米凸缘和纳秒的分子动力学模拟
机译:纳米压痕法研究LiTaO3单晶的室温蠕变行为和位错成核的活化体积
机译:InP的纳米压痕和纳米刮擦过程中位错成核的发生分析