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Effects of elastic strain and diffusion-limited aggregation on morphological instabilities in sputtered nitride thin films

机译:弹性应变和扩散限制聚集对溅射氮化物薄膜形态不稳定性的影响

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摘要

The nature of morphological instabilities in sputtered titanium and niobium nitride thin films grown on amorphous borosilicate glass and single-crystal Si (311) substrates is investigated. All the films were grown by RF magnetron sputtering at constant power and pressure but with thickness varying from 40 to 400 nm and substrate temperatures of 250-300 ℃. The surfaces of the thin films can be divided into two areas: one in which the morphology is smooth with densely packed grains and the other in which there are morphological instabilities. A closer observation of the morphological instabilities reveals the coexistence of elastic strain-induced Asaro-Tiller-Grinfeld (ATG) type of instability and dendritic and snowflake structures due to diffusion-limited aggregation (DLA). The ATG instabilities extend over lengths of several tens of micrometers, whereas the DLA structures are confined to lengths of less than 10 urn in the same film. At low thickness (40-100 nm) only the elastic strain-induced instabilities emerge. High growth rates and a thickness of 150 nm are required to cause DLA and coexistence of the two kinds of instabilities. It has also been found that crystallization is not a prerequisite for the formation of dendritic structures.
机译:研究了在非晶硼硅酸盐玻璃和单晶Si(311)衬底上生长的溅射钛和氮化铌薄膜中形态不稳定性的性质。所有薄膜均通过射频磁控溅射在恒定功率和压力下生长,厚度在40至400 nm之间变化,基板温度为250-300℃。薄膜的表面可分为两个区域:一个区域的形态是光滑的,具有密集的晶粒,另一个区域的形态是不稳定的。仔细观察形态不稳定性发现,弹性扩散诱导的Asaro-Tiller-Grinfeld(ATG)类型的不稳定性以及由于扩散受限聚集(DLA)的树状结构和雪花结构并存。 ATG的不稳定性在几十微米的长度上延伸,而DLA结构在同一膜中的长度被限制在小于10微米。在低厚度(40-100 nm)下,仅出现弹性应变引起的不稳定性。需要高生长速率和150 nm的厚度才能引起DLA和两种不稳定性的共存。还发现结晶不是形成树枝状结构的先决条件。

著录项

  • 来源
    《Journal of Materials Research》 |2014年第16期|1711-1720|共10页
  • 作者单位

    School of Engineering Science and Technology, Centre for Nanotechnology, University of Hyderabad, Hyderabad 500046, India,Chemistry and Physics of Materials Unit,Jawaharlal Nehru Center for Advanced Scientific Research, Jak-kur, Bangalore 560064, India;

    School of Physics, University of Hyderabad, Hyderabad 500 046, India and Centre for Nanotechnology,University of Hyderabad, Hyderabad 500 046, India;

    Centre for Nanotechnology, University of Hyderabad, Hyderabad 500 046, India and School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad 500 046, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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