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首页> 外文期刊>Journal of magnetism and magnetic materials >Effect of structural disorder on the physical properties and electronic structure of the DC magnetron sputtered Ni films
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Effect of structural disorder on the physical properties and electronic structure of the DC magnetron sputtered Ni films

机译:结构性障碍对DC磁控溅射Ni薄膜物理性质和电子结构的影响

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The effect of the structural disorder in Ni films on their magnetic, magneto-optical (MO), transport, optical properties, and the spin polarization degree of conduction electrons as well as the electronic structure has been investigated. Room temperature (RT) DC magnetron sputtered onto glass substrates Ni films have been found to be amorphous. It was experimentally shown that an amorphous Ni films (ⅰ) are not ferromagnetically ordered at least for T > 78 K temperature range, (ⅱ) do not show any MO response at RT, (ⅲ) have 10 times larger resistivity than crystalline phase which nearly does not depend on temperature, (ⅳ) exhibit the optical conductivity (OC) spectrum without interband absorption peaks typical for crystalline Ni, (ⅴ) have spin polarization degree of conduction electrons close to zero. Annealing of amorphous Ni films at T = 600 K causes their crystallization with the formation of the face-centered-cubic phase and restores the physical properties typical for crystalline Ni. The experimental OC spectrum of crystalline Ni film exhibits an intense interband absorption peaks located at E = 1.4 and 4.55 eV; it is in reasonable correspondence with the calculated interband OC spectrum of Ni. Main absorption peaks in the experimental OC spectrum were put in correspondence with the electron excitations between definite electronic states of the E(k) structure of Ni. The experimentally determined spin polarization degree of conduction electrons of crystalline Ni films was found to be close to that for bulk Ni and consists of P ≈ 40%.
机译:研究了结构障碍在Ni膜上的磁力,磁光(Mo),传输,光学性质以及传导电子的自旋极化度以及电子结构的影响。室温(RT)DC磁控溅射到玻璃基板上Ni薄膜是无定形的。实验结果表明,无定形Ni膜(Ⅰ)至少在T> 78k温度范围内不氧磁性排序,(Ⅱ)在室温下没有显示任何MO响应,(Ⅲ)的电阻率比结晶相的10倍几乎不依赖于温度,(ⅳ)表现出光导(OC)的光谱而没有典型的结晶Ni的间带吸收峰,(ⅴ)具有接近零的传导电子的自旋偏振度。在T = 600k处的非晶Ni膜退火使其结晶与形成面为中心立方相,并恢复典型的物理性质,典型的结晶Ni。结晶Ni薄膜的实验oC光谱显示出位于E = 1.4和4.55eV的强烈的间带吸收峰;它与Ni的计算的InterBand OC频谱合理地对应。实验OC光谱中的主要吸收峰与Ni的E(k)结构的明确电子状态之间的电子激发相对应。发现结晶Ni膜的实验确定的传导电子的自旋偏振度接近散装Ni,由P≈40%组成。

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