首页> 外文期刊>Journal of magnetism and magnetic materials >Magnetic properties of a Y_3Fe_5O_(12)/(TmBi)_3(FeGa)_5O_(12) heterostructure related to strain-induced magnetic anisotropy
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Magnetic properties of a Y_3Fe_5O_(12)/(TmBi)_3(FeGa)_5O_(12) heterostructure related to strain-induced magnetic anisotropy

机译:与应变诱导的磁各向异性相关的Y_3FE_5O_(12)/(TMBI)_3(FEGA)_3(FEGA)_(FEGA)_5O_(12)异质结构

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摘要

We studied the static and dynamic magnetic properties of a Y_3Fe_5O_(12)/Tm_(2.28)Bi_(0.72)Fe_(4.3)Ga_(0.7)O_(12)(TBIG) heterostructure. TBIG nanostructured films were sputtered on 300 nm liquid phase epitaxy Y_3Fe_5O_(12) films at 400 °C and post-annealing in air at 800 °C. X-ray diffraction (XRD) patterns provide evidence of strain-induced lattice mismatch between the Y_3Fe_5O_(12) and the TBIG films. Strain-induced anisotropy produces multipeak ferromagnetic resonance spectra from the Y_3Fe_5O_(12) film, and these resonance modes behave differently. Fitting of f-H_r data to the Kittel equation yields the anisotropy fields of each resonance mode, indicating the existence of an out-of-plane anisotropic field which is up to 220.9 Oe. We also observe comb-like spin wave spectra causing by the interaction of elastic waves and spin waves in the in-plane and out-of-plane magnetization with peak separation Δf ≈ 3.24 MHz.
机译:我们研究了Y_3FE_5O_(12)/ TM_(2.28)BI_(0.72)FE_(4.3)GA_(0.7)O_(12)(TBIG)异质结构的静态和动态磁性。在400℃下在300nm液相外延Y_3FE_5O_(12)膜上溅射TBIG纳米结构薄膜,并在800℃下在空气中退火。 X射线衍射(XRD)图案提供了在Y_3FE_5O_(12)和TBIG膜之间的应变诱导的晶格错配的证据。应变诱导的各向异性从Y_3FE_5O_(12)膜产生多跳铁磁共振谱,并且这些共振模式表现不同。将F-H_R数据拟合到Kittel等式产生每个共振模式的各向异性场,表明存在高达220.9 OE的平面异位级区域的存在。我们还观察到梳状自旋波光谱引起弹性波和旋转波在平面内和平面外磁化的相互作用,峰值分离ΔF≈3.24MHz。

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  • 来源
    《Journal of magnetism and magnetic materials》 |2020年第3期|165817.1-165817.5|共5页
  • 作者单位

    State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

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  • 正文语种 eng
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  • 关键词

    Magnetic properties; Ferrimagnetism; Yttrium iron garnet; Perpendicular magnetic anisotropy;

    机译:磁性;Ferrimagnetism;钇铁石榴石;垂直磁各向异性;

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