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首页> 外文期刊>Journal of magnetism and magnetic materials >Evolution of magnetic anisotropy in cobalt film on nanopatterned silicon substrate studied in situ using MOKE
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Evolution of magnetic anisotropy in cobalt film on nanopatterned silicon substrate studied in situ using MOKE

机译:用犬研究纳米透明硅衬底上钴膜磁各向异性的演变

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摘要

Evolution of magnetization behaviour of cobalt film on nano patterned silicon (1 0 0) substrate, with film thickness, has been studied. In situ magneto-optical Ken-effect measurements during film deposition allowed us to study genuine thickness dependence of magnetization behaviour, all other parameters like surface topography, deposition conditions remaining invariant. The nanopatterned substrate had a 8 nm thick amorphous silicon nitride surface layer. Thus, induced magnetic anisotropy in the Co film is expected to be of purely topographical origin, excluding any effect of the single crystalline Si (1 0 0) surface on magnetic anisotropy film due to possible epitaxy or surface step-induced anisoropy. In conformity with earlier results, the film induces a uniaxial magnetic anisotropy in the film, with its magnitude decreasing with increasing thickness. A magnetically dead layer of 2.6 nm forms at the interface with the substrate. Analysis of the magnetic layer thickness dependence of anisotropy shows that it has contributions from both, ⅰ) exchange energy which is volume dependent and, ⅱ) stray dipolar fields at the surface/interface. This suggests that local magnetization follows only partially the topography of the rippled surface. As expected from energy considerations, for small film thickness, the local magnetization closely follows the surface contour of the ripples making the volume term as the dominant contribution. With increasing film thickness, the local magnetization gradually deviates from the local slope and approaches towards a uniform magnetization along the macroscopic film plane making the surface term as the dominant contribution. Significant deviation of the observed stray dipolar field contribution from the anisotropy energy calculated on the basis of Schlomann's theory is observed, which can be attributed to several factors like, deviation of surface topography from an ideal sinusoidal wave, breaks of continuity along the ripple direction, topological defects like, pattern dislocations, and small film thicknesses compared to the correlation length of surface corrugations.
机译:研究了纳米图案硅(1 0 0)衬底上钴膜的磁化行为的演化已经研究。在薄膜沉积期间,原位磁光ken效应测量允许我们研究磁化行为的真正厚度依赖性,所有其他参数如表面形貌,沉积条件剩余不变。纳米纹状颗粒具有8nm厚的无定形氮化硅表面层。因此,预期CO膜中的诱导磁各向异性是纯粹的地形来源,除了可能的外延或表面阶梯诱导的主体复制,单结晶Si(1 0 0)表面在磁各向异性膜上的任何效果。符合前面的结果,薄膜在膜中引起单轴磁各向异性,其厚度增加的幅度下降。在与基材的界面处形成2.6nm的磁性死层。各向异性磁性层厚度依赖性的分析表明,它具有来自表面/界面的体积依赖性的贡献,Ⅰ)交换能量,Ⅱ)杂散双极场。这表明局部磁化仅部分地部分地是波纹表面的形貌。从能量考虑预期,对于小型薄膜厚度,局部磁化紧密地跟随涟漪的表面轮廓,使得体积术语作为主导贡献。随着薄膜厚度的增加,局部磁化逐渐偏离局部斜坡,并沿着宏观薄膜平面朝向均匀的磁化,使表面术语作为主导贡献。观察到观察到的杂散偶极场从基于Schlomann理论计算的各向异性能量的显着偏差,这可以归因于几个等因素,类似于理想正弦波的表面形貌的偏差,沿着纹波方向突破连续性,与表面波纹的相关长度相比,拓扑缺陷,图案位错和小膜厚度。

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  • 来源
    《Journal of magnetism and magnetic materials》 |2020年第3期|165934.1-165934.6|共6页
  • 作者单位

    Amity Centre for Spintronic Materials Amity University Noida 201313 India;

    Variable Energy Cyclotron Centre 1/AF Bidhannagar Kolkata 700064 India;

    UGC-DAE CSR University Campus Khandwa Road Indore 452001 India;

    UGC-DAE CSR University Campus Khandwa Road Indore 452001 India;

    Amity Centre for Spintronic Materials Amity University Noida 201313 India;

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