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Investigations on magnetic and electrical properties of Zn doped Fe_2O_3 nanoparticles and their correlation with local electronic structures

机译:Zn掺杂Fe_2O_3纳米粒子的磁电性质及其与局部电子结构的相关性研究

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摘要

Present work aims at investigating the structural, magnetic and dielectric properties of zinc doped Fe2O3 nanoparticles (pure, 10%, 20% & 30%) and correlated with their local electronic structures using X-ray absorption near-edge structure (XANES) spectroscopy. X-ray diffraction and Raman measurements infer that doping of Zn cations lead to the formation of secondary phases corresponding to ZnFe2O4 along with the hematite phase of Fe2O3. Magnetic measurements show that magnetization vs magnetic field curve for 10% Zn doping exhibit maximum saturation magnetization (similar to 2.93 x 10(-3) emu/g) as well as the coercivity (similar to 956 Oe). The values of these parameters decrease for higher content of Zn. The temperature dependence of dielectric behaviour follows the same trend as that of the lattice parameter and magnetic measurements. The XANES spectra at Fe L- and Fe K-edges indicate partial reduction of Fe3+ ions into Fe2+ upon Zn doping in the Fe2O3 lattice. However, divalent state is favourable for Zn (i.e. Zn2+) within the doping range reported in this study.
机译:目前的工作旨在研究掺杂锌的Fe2O3纳米颗粒(纯,10%,20%和30%)的结构,磁性和介电性能,并使用X射线吸收近边缘结构(XANES)光谱技术与它们的局部电子结构相关。 X射线衍射和拉曼测量结果表明,掺杂Zn阳离子会导致形成与ZnFe2O4对应的次级相以及Fe2O3的赤铁矿相。磁测量表明,掺杂10%Zn的磁化强度与磁场曲线显示出最大饱和磁化强度(类似于2.93 x 10(-3)emu / g)和矫顽力(类似于956 Oe)。这些参数的值随着Zn含量的增加而降低。介电行为的温度依赖性遵循与晶格参数和磁测量相同的趋势。 Fe L边缘和Fe K边缘的XANES光谱表明,在Fe2O3晶格中掺杂锌后,Fe3 +离子部分还原为Fe2 +。但是,在本研究报道的掺杂范围内,二价态对Zn(即Zn2 +)有利。

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  • 来源
    《Journal of magnetism and magnetic materials》 |2019年第11期|165398.1-165398.8|共8页
  • 作者单位

    Deenbandhu Chhotu Ram Univ Sci & Technol, Dept Phys, Murthal 131039, Haryana, India;

    Malaviya Natl Inst Technol, Dept Phys, Jaipur 302017, Rajasthan, India;

    Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 02792, South Korea;

    Inter Univ Accelerator Ctr, Mat Sci Div, New Delhi 110067, India;

    Deenbandhu Chhotu Ram Univ Sci & Technol, Dept Phys, Murthal 131039, Haryana, India;

    Malaviya Natl Inst Technol, Dept Phys, Jaipur 302017, Rajasthan, India;

    Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 02792, South Korea;

    Deenbandhu Chhotu Ram Univ Sci & Technol, Dept Phys, Murthal 131039, Haryana, India;

    Inter Univ Accelerator Ctr, Mat Sci Div, New Delhi 110067, India;

    Inter Univ Accelerator Ctr, Mat Sci Div, New Delhi 110067, India;

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