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High resistive ferrite films by a solution process for electromagnetic compatible (EMC) devices

机译:通过电磁兼容(EMC)器件的解决方案制造高电阻铁氧体薄膜

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摘要

Mn-Zn ferrite films with high resistivity and good noise suppressing ability for use as 'coupling-type noise suppressors' have been prepared by the spin-spray ferrite plating. The as-prepared films were crystalline and exhibited single-phase spinel structure. The films had an 'integrated nano-columnar' morphology that resulted in a very high resistivity. Further, by varying the chemical composition, films with varying resistivity were prepared and then heat treated at 260 ℃ for 3 min, similar to that of the reflow soldering process. The reflection and transmission coefficients, S_(11) and S_(21) parameters, on coplanar micro-strip line (50Ω) were measured for the as-prepared and heat-treated films in order to study the effect of heat treatment. When the resistivity was above 2 × 10~5Ω/sq, S_(11) and S_(21) exhibited uniform profiles throughout the measurement frequency (50MHz-10GHz), which is ideal for the 'coupling-type' noise suppressor. These films retain a moderately high resistivity and hence do not show the downshift in the stopband frequency even after the heat treatment (reflow soldering process).
机译:通过自旋喷涂铁氧体镀层,制备了用作“耦合型噪声抑制器”的具有高电阻率和良好的噪声抑制能力的Mn-Zn铁氧体膜。所制备的膜是结晶的并且表现出单相尖晶石结构。这些膜具有“集成纳米柱”形态,从而导致很高的电阻率。此外,通过改变化学成分,制备具有不同电阻率的膜,然后在260℃下热处理3分钟,类似于回流焊接工艺。对制备的和热处理过的薄膜在共面微带线(50Ω)上的反射和透射系数S_(11)和S_(21)参数进行了测量,以研究热处理的效果。当电阻率高于2×10〜5Ω/ sq时,S_(11)和S_(21)在整个测量频率(50MHz-10GHz)内均呈现均匀分布,这对于“耦合型”噪声抑制器是理想的选择。这些薄膜保持适度的高电阻率,因此即使在热处理(回流焊接工艺)之后,阻带频率也不会降低。

著录项

  • 来源
    《Journal of magnetism and magnetic materials》 |2009年第24期|3979-3983|共5页
  • 作者单位

    Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan;

    NEC Tokin Corporation, 6-7-1 Koriyama, Taihaku-ku, Sendai, Miyagi 982-8510, japan;

    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama Meguro, Tokyo 152-8552, Japan;

    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama Meguro, Tokyo 152-8552, Japan;

    Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan;

    Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ferrite film; solution process; resistivity; magnetic material;

    机译:铁氧体膜解决过程;电阻率磁性材料;

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