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机译:中间层厚度取决于垂直记录介质中的开关场分布
Data Storage Institute, A'STAR (Agency for Science Technology and Research), 5 Engineering Drive 1, Singapore-117 608, Singapore;
Data Storage Institute, A'STAR (Agency for Science Technology and Research), 5 Engineering Drive 1, Singapore-117 608, Singapore Department of Electrical and Computer Engineering, National University of Singapore, Singapore-117608, Singapore;
Data Storage Institute, A'STAR (Agency for Science Technology and Research), 5 Engineering Drive 1, Singapore-117 608, Singapore;
Data Storage Institute, A'STAR (Agency for Science Technology and Research), 5 Engineering Drive 1, Singapore-117 608, Singapore;
Data Storage Institute, A'STAR (Agency for Science Technology and Research), 5 Engineering Drive 1, Singapore-117 608, Singapore Department of Electrical and Computer Engineering, National University of Singapore, Singapore-117608, Singapore;
switching field distribution; perpendicular recording media; intermediate layer;
机译:低气压和高气压下Ru中间层引起的CoCrPt-SiO_2垂直记录介质转换场的变化
机译:Co / Pd多层垂直磁记录介质中Pd / Si中间层厚度比的优化
机译:Si / NiFe / FeCoB晶体SUL降低CoPtCr-SiO $ _ {{2} $}颗粒垂直磁记录介质的Ru中间层厚度
机译:使用Ru-SiO_2,Cocrpt-SiO_2垂直记录介质的中间层厚度降低
机译:垂直记录介质中的高速切换。
机译:Ru中间层的斜入射溅射用于垂直记录介质中晶间交换的解耦
机译:确定内在开关场分布 垂直记录媒体:$ \ Delta H(m,\ Delta m)$的数值研究 方法