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首页> 外文期刊>Journal of magnetism and magnetic materials >Micro-patterning of NdFeB and SmCo magnet films for integration into micro-electro-mechanical-systems
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Micro-patterning of NdFeB and SmCo magnet films for integration into micro-electro-mechanical-systems

机译:NdFeB和SmCo磁体膜的微图案化以集成到微机电系统中

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摘要

The integration of high-performance RE-TM (NdFeB and SmCo) hard magnetic films into micro-electromechanical-systems (MEMS) requires their patterning at the micron scale. In this paper we report on the applicability of standard micro-fabrication steps (film deposition onto topographically patterned substrates, wet etching and planarization) to the patterning of 5-8 μm thick RE-TM films. While NdFeB comprehensively fills micron-scaled trenches in patterned substrates, SmCo deposits are characterized by poor filling of the trench corners, which poses a problem for further processing by planarization. The magnetic hysteresis loops of both the NdFeB and SmCo patterned films are comparable to those of non-patterned films prepared under the same deposition/annealing conditions. A micron-scaled multipole magnetic field pattern is directly produced by the unidirectional magnetization of the patterned films. NdFeB and SmCo show similar behavior when wet etched in an amorphous state: etch rates of approximately 1.25 μm/min and vertical side walls which may be attributed to a large lateral over-etch of typically 20 μm. Chemical-mechanical-planarization (CMP) produced material removal rates of 0.5-3 μm/min for amorphous NdFeB. Ar ion etching of such films followed by the deposition of a Ta layer prior to film crystallization prevented degradation in magnetic properties compared to non-patterned films.
机译:高性能RE-TM(NdFeB和SmCo)硬磁膜集成到微机电系统(MEMS)中需要在微米级进行图案化。在本文中,我们报告了标准的微细加工步骤(将膜沉积到具有地形图案的基板上,湿法蚀刻和平坦化)对5-8μm厚的RE-TM膜的图案化的适用性。尽管NdFeB全面填充了图案化衬底中的微米级沟槽,但SmCo沉积的特点是沟槽角填充不良,这给通过平面化进行进一步处理带来了问题。 NdFeB和SmCo图案化膜的磁滞回线与在相同沉积/退火条件下制备的非图案化膜的磁滞回线相当。通过图案化膜的单向磁化直接产生微米级的多极磁场图案。当以非晶态湿法刻蚀时,NdFeB和SmCo表现出相似的行为:刻蚀速率约为1.25μm/ min,且侧壁垂直可能归因于通常为20μm的较大横向过刻蚀。化学机械平面化(CMP)对非晶NdFeB的材料去除速率为0.5-3μm/ min。与未图案化的膜相比,对此类膜进行Ar离子蚀刻,然后在膜结晶之前沉积Ta层可防止磁性能下降。

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  • 来源
    《Journal of magnetism and magnetic materials》 |2009年第6期|590-594|共5页
  • 作者单位

    CEA Leti-MINATEC, 17 rue des Martyrs, 38054 Grenoble, France Institut Neel. CNRS-UJF, 25 rue des Martyrs, 38042 Grenoble, France;

    CEA Leti-MINATEC, 17 rue des Martyrs, 38054 Grenoble, France;

    CEA Leti-MINATEC, 17 rue des Martyrs, 38054 Grenoble, France;

    Laboratory of Magnetoelectronics, Tver State University, 170000 Tver, Russia;

    Institut Neel. CNRS-UJF, 25 rue des Martyrs, 38042 Grenoble, France;

    Institut Neel. CNRS-UJF, 25 rue des Martyrs, 38042 Grenoble, France;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    NdFeB films; SmCo films; integration; MEMS;

    机译:钕铁硼薄膜;m钴薄膜;积分;微机电系统;

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