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首页> 外文期刊>Journal of magnetism and magnetic materials >The stability and half-metallicity of the (111) interfaces for Co_2VAl/PbS
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The stability and half-metallicity of the (111) interfaces for Co_2VAl/PbS

机译:Co_2VAl / PbS的(111)界面的稳定性和半金属性

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摘要

Based on the recent theoretical and experimental studies on the properties of bulk and thin film for full-Heusler alloy Co_2VAl, we construct four (111) interfaces of Co_2VAl/PbS and investigate their structural, electronic and magnetic properties by means of the first principles calculations. It is shown from the density of states that the half-metallic or nearly half-metallic character is existed in some considered interfaces. There is the strong interaction between the interfacial-layer atoms due to their rehybridiza-tion according to the calculated interfacial adhesion energies and magnetic moments. Importantly, the stable and half-metallic interfacial structure is obtained from the calculations on the interfacial adhesion energies and spin polarization, which is beneficial to design and fabricate the spintronic devices with superior performance.
机译:基于最近对全Heusler合金Co_2VAl的块状和薄膜性质的理论和实验研究,我们构造了Co_2VAl / PbS的四(111)个界面,并通过第一性原理计算研究了它们的结构,电子和磁性。从状态密度可以看出,在某些考虑的界面中存在半金属或几乎半金属的特征。根据计算出的界面粘附能和磁矩,由于界面层原子的再混合,在界面层原子之间存在强相互作用。重要的是,通过界面粘合能和自旋极化的计算获得了稳定的半金属界面结构,这有利于设计和制造性能优异的自旋电子器件。

著录项

  • 来源
    《Journal of magnetism and magnetic materials》 |2015年第3期|343-347|共5页
  • 作者单位

    College of Electro-Information Engineering, Xuchang University, Xuchang 461000, People's Republic of China;

    College of Electro-Information Engineering, Xuchang University, Xuchang 461000, People's Republic of China;

    College of Electro-Information Engineering, Xuchang University, Xuchang 461000, People's Republic of China;

    College of Electro-Information Engineering, Xuchang University, Xuchang 461000, People's Republic of China;

    School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China,International Center of Materials Physics, Chinese Academy of Science, Shenyang 110015, People's Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A. Half-metallicity; A. Interface; C. Spintronic devices; D. First-principles;

    机译:A.半金属性;A.接口;C.自旋电子器件;D.第一性原理;

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