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Magnetic properties of Ni-implanted ITO thin films

机译:镍注入ITO薄膜的磁性

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摘要

The magnetic properties of Ni-implanted ITO thin films have been investigated by ferromagnetic resonance (FMR) technique and vibrating sample magnetometry (VSM) techniques. Commercially available ITO thin films on fused silica substrates have been implanted with different fluences of Ni~+ ions with energy of 40 keV and ion current density of 8 μA/cm~2 at room temperature. The samples with three doses of 0.5 × 10~(17), 1.0 × 10~(17) and 1.5 × 10~(17) ions/cm~2 have been studied. Room temperature ferromagnetism has been observed in the nickel-implanted ITO samples with fluences of 1.0 × 10~(17) and 1.5 × 10~(17) ions/cm~2. The magnetic properties of the samples have been explained by the formation of Ni-nanoparticles in the implanted surface layer of the ITO films. Although the formation of a diluted magnetic oxide phase cannot be ruled out entirely, the analysis of our FMR and VSM data reveals that the metallic Ni nanoparticles, formed during high-dose implantation process, have major contribution to the magnetic properties of the Ni-implanted ITO thin films. The sizes of the Ni-nanoparticles have been calculated from the blocking temperatures obtained by the VSM measurements. The filling factor of the Ni ferromagnetic phase in the granular magnetic layer has also been estimated by the effective magnetization approach applied to the FMR results.
机译:已经通过铁磁共振(FMR)技术和振动样品磁法(VSM)技术研究了镍注入的ITO薄膜的磁性。在室温下,已在熔融石英基板上以市售的ITO薄膜注入了不同通量的Ni〜+离子,能量为40keV,离子电流密度为8μA/ cm〜2。研究了三种剂量为0.5×10〜(17),1.0×10〜(17)和1.5×10〜(17)离子/ cm〜2的样品。在注入镍的ITO样品中观察到室温铁磁性,通量为1.0×10〜(17)和1.5×10〜(17)离子/ cm〜2。样品的磁性已经通过在ITO膜的注入表面层中形成Ni-纳米颗粒来解释。尽管不能完全排除稀释的磁性氧化物相的形成,但对我们的FMR和VSM数据的分析表明,在高剂量注入过程中形成的金属Ni纳米颗粒对注入Ni的磁性具有重要作用ITO薄膜。 Ni-纳米颗粒的尺寸是根据通过VSM测量获得的粘连温度计算得出的。还已经通过应用于FMR结果的有效磁化方法来估计颗粒磁性层中Ni铁磁相的填充因子。

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  • 来源
    《Journal of magnetism and magnetic materials》 |2015年第2期|129-135|共7页
  • 作者单位

    Gebze Institute of Technology, Department of Physics, 41400 Kocaeli, Turkey;

    Gebze Institute of Technology, Department of Physics, 41400 Kocaeli, Turkey;

    Kazan Physical-Technical Institute, 420029 Kazan, Russia;

    Kazan Physical-Technical Institute, 420029 Kazan, Russia;

    Gebze Institute of Technology, Department of Physics, 41400 Kocaeli, Turkey,Kazan Physical-Technical Institute, 420029 Kazan, Russia;

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