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Role of processing parameters on the morphology and magnetic properties of Tb-Fe-Co thin films

机译:工艺参数对Tb-Fe-Co薄膜形貌和磁性的影响

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摘要

The effect of processing parameters such as argon gas pressure (5,10 and 15 mTorr) and sputtering power (50 and 100 W) on the structure, microstructure and magnetic properties of dc magnetron sputtered Tb-Fe-Co films was investigated. X-ray diffraction studies indicate that all the films were found to be amorphous in nature irrespective of the deposition conditions. The increase in sputtering gas pressure and power was found to deplete the transition metal content in the films. Room temperature ferromagnetism accompanied with low coercivity (20 Oe) and low saturation magnetic field has been achieved for the film grown at 5 mTorr gas pressure and 50 W sputtering power. The microstructure of Tb-Fe-Co films showed the presence of islands, whose size increased with increasing sputtering power and argon gas pressure. Magnetization studies indicated that all the films were magnetically ordered up to room temperature. A compensation temperature was observed for the films grown at higher gas pressure and sputtering power. Annealing of the films did not result in any crystallization and as a consequence the magnetic properties were found to remain unaltered.
机译:研究了氩气压力(5,10和15 mTorr)和溅射功率(50和100 W)等工艺参数对直流磁控溅射Tb-Fe-Co薄膜的结构,微观结构和磁性能的影响。 X射线衍射研究表明,发现所有膜本质上都是非晶态的,与沉积条件无关。发现溅射气体压力和功率的增加耗尽了膜中过渡金属的含量。在5 mTorr气压和50 W溅射功率下生长的薄膜已实现了室温铁磁性以及低矫顽力(20 Oe)和低饱和磁场。 Tb-Fe-Co薄膜的微观结构表明存在岛,岛的大小随溅射功率和氩气压力的增加而增加。磁化研究表明,所有薄膜在室温下都具有磁性。对于在较高气压和溅射功率下生长的膜,观察到补偿温度。膜的退火不会导致任何结晶,结果发现磁性保持不变。

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  • 来源
    《Journal of magnetism and magnetic materials》 |2016年第11期|163-168|共6页
  • 作者单位

    Defence Metallurgical Research Laboratory, Hyderabad, India ,Department of Physics, National Institute of Technology, Warangal, India;

    Defence Metallurgical Research Laboratory, Hyderabad, India;

    Defence Metallurgical Research Laboratory, Hyderabad, India;

    Defence Metallurgical Research Laboratory, Hyderabad, India;

    Defence Metallurgical Research Laboratory, Hyderabad, India;

    Department of Physics, National Institute of Technology, Warangal, India;

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