首页> 外文期刊>Journal of Luminescence >Transient electronic processes of phosphorescent Ir(ppy)_3 under endothermic energy transfer from fluorescent TPD host material
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Transient electronic processes of phosphorescent Ir(ppy)_3 under endothermic energy transfer from fluorescent TPD host material

机译:荧光TPD主体材料在吸热能量转移下的Ir(ppy)_3磷光瞬态电子过程

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摘要

Temperature-sensitive photoluminescence (PL) of Ir(ppy)_3 is observed in a spin-coated film of TPD containing 5 wt% Ir(ppy)_3. Numerical calculation is made for the emission intensity using rate equations for three zero-field splitting substates of the triplet Tt state. Good agreement is obtained for the temperature dependence between the calculated and measured PLs. It is concluded that (1) the increase of PL intensity observed at 10-100 K is due to the spin-phonon transitions among the three substates and the exothermic energy transfer from Ir(ppy)_3 to TPD, (2) the endothermic energy transfer from TPD to Ir(ppy)_3 is responsible for the increase above 100 K, and (3) the decrease of PL intensity observed above 200 K is caused by the energy diffusion from TPD to neighboring unexcited TPS.
机译:在包含5重量%Ir(ppy)_3的TPD的旋涂膜中观察到Ir(ppy)_3的温度敏感的光致发光(PL)。使用三重态Tt状态的三个零场分裂子状态的速率方程,对发射强度进行了数值计算。计算和测得的PL之间的温度相关性获得了很好的一致性。结论是:(1)在10-100 K处观察到的PL强度增加是由于三个亚状态之间的自旋声子跃迁和放热能从Ir(ppy)_3到TPD的转移所致;(2)吸热能从TPD到Ir(ppy)_3的转移引起了100 K以上的增加,并且(3)200 K以上观察到的PL强度的减少是由TPD到邻近的未激发TPS的能量扩散引起的。

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