2 × 56 GB/s From a Double Side Electroabsorption Modulated DFB Laser and Application in Novel Optical PAM4 Generation

摘要

In this paper, we present a novel device which comprises a DFB laser with electroabsorption modulators integrated on both sides. This integrated chip provides two independently modulated optical outputs from a single laser source and thus cuts the required number of chips for multilane applications in half. Both outputs can be simultaneously operated with 56 Gb/s NRZ leading to 112 Gb/s from a single chip. The performance of the chip is further tested in an optical PAM4 generation experiment. The two NRZ modulated outputs are combined with a polarization combiner to generate an optical PAM4 signal which on the receiver side is measured with a polarization insensitive photodetector.