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Influence of Drawing Conditions on the Properties and Radiation Sensitivities of Pure-Silica-Core Optical Fibers

机译:拉伸条件对纯硅芯光纤性能和辐射敏感性的影响

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摘要

The structure and radiation sensitivities of three different pure-silica-core fluorine-doped-cladding optical fibers, made from the same original preform, were investigated by several experimental techniques. The fibers were obtained by changing the drawing speed and tension in the typical ranges of values used for the radiation-tolerant waveguides. The Raman spectroscopy revealed no significant difference among the fibers before irradiation. At variance, the comparison between the fibers and their associated preform highlighted an increase in the amplitude of the D2 band that is related to the concentration of three-member rings. Moreover, in the zones where the D2 increase is larger, we observed that the R band peak shifts to higher energy values. The larger shifts are detected in the fluorine-doped cladding. These data suggest higher values of fictive temperature and density in the fibers with respect to the associated preform. The study of the concentrations of γ-ray induced nonbridging oxygen hole centers and E''Si centers provided no evidence for significant dependence on the investigated drawing conditions. Under γ-rays, a linear relation between the concentrations of these two defects is observed. These concentrations increase sublinearly with the dose suggesting the breaking of the Si-O-Si strained bonds as the main generation channel. Finally, under X-rays, we observed that C1-related defects are mainly responsible for the induced absorption at about 3.5 eV. These defects are unstable at room temperature and a bleaching of their related attenuation is observed 1h after the end of the irradiation.
机译:通过几种实验技术研究了由相同的原始预成型件制成的三种不同的纯硅纤芯掺氟包层光纤的结构和辐射敏感性。通过在耐辐射波导所用的典型值范围内改变拉伸速度和张力来获得纤维。拉曼光谱显示辐照前纤维之间无显着差异。在变化情况下,纤维及其相关预成型坯之间的比较突出了与三元环浓度有关的D2谱带振幅的增加。此外,在D2增大较大的区域中,我们观察到R谱带峰移至更高的能量值。在掺氟覆层中检测到较大的偏移。这些数据表明相对于相关的预成型件,纤维的虚拟温度和密度值更高。 γ射线诱导的非桥接氧空穴中心和E''Si中心浓度的研究没有证据表明对所研究的绘图条件有显着依赖性。在γ射线下,观察到这两个缺陷浓度之间的线性关系。这些浓度随剂量线性增加,表明Si-O-Si应变键断裂作为主要的生成通道。最后,在X射线下,我们观察到与C1有关的缺陷主要是在约3.5 eV时引起的吸收。这些缺陷在室温下是不稳定的,并且在辐照结束后1h观察到其相关衰减的漂白。

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