Design and fabrication of a 1 Gb/s OEIC receiver for fiber-optic data link applications

摘要

This paper describes a 1 Gb/s fully monolithic integrated GaAs OEIC receiver based on 0.6 /spl mu/m gate length D-mode MESFET technology. The adoption of 0.85 /spl mu/m short wavelength standard permits the integration of low capacitance MSM photodetectors and conventional electronic circuitry onto a single chip. Hence, the viability of low-cost manufacturing of high-speed optoelectronic devices will be improved. The design, fabrication, and testing of the receiver chip is discussed in detail. A BER of less than 10/sup -9/ at 1 Gb/s has been achieved for optical power of -20.5 dBm with a dynamic range of greater than 32 dB. This performance is sufficient for practical use in optical data link systems operating at gigabit/s data rates.