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Multi-Stage 8 × 8 Silicon Photonic Switch Based on Dual-Microring Switching Elements

机译:基于双微环开关元件的多级8×8硅光子开关

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摘要

We demonstrate the first multi-stage 8 & x00D7; 8 silicon photonic switch with switching elements based on dual add-drop microrings with a compact footprint of 4 mm(2). This device leverages co-design of the switch architecture and the switching elements with a well-balanced set of performance metrics. The switching elements are designed to have a 3-dB optical passband of 165 & x00A0;GHz, exhibiting off- and on-resonance losses of 0.67 & x00A0;dB and 2 & x00A0;dB, respectively. Full characterization of all switch paths shows an end-to-end on-chip loss between 4.4 and 9.6 & x00A0;dB, with worst-case crosstalk leakage averaged at -16 & x00A0;dB. Owing to the efficient doped waveguide thermo-optic phase shifters, the device features a tuning efficiency of 48.85 & x00A0;GHz & x002F;mW. The reconfiguration time of the switch fabric is measured to be 1.2 & x03BC;s and 0.5 & x03BC;s at the rise and fall edge, respectively. The dual-microring switching element together with the multi-stage architecture preserves an end-to-end passband over 55 & x00A0;GHz. We validate the switch performance with optical paths of varying numbers of on- and off-resonance switching elements - less than 2 & x00A0;dB power penalties are obtained for all data routings at 32 & x00A0;Gbps.
机译:我们演示了第一个多阶段8&x00D7; 8硅光子开关,其开关元件基于双分插式微环,具有占地4 mm(2)的紧凑型结构。该设备利用一组均衡的性能指标来充分利用交换架构和交换元件的协同设计。开关元件设计为具有165&x00A0; GHz的3 dB光通带,分别表现出0.67&x00A0; dB和2&x00A0; dB的失谐和导通损耗。所有开关路径的全部特性表明端到端片上损耗在4.4和9.6&x00A0; dB之间,而最坏情况下的串扰泄漏平均为-16&x00A0; dB。由于有效的掺杂波导热光移相器,该器件的调谐效率为48.85&x00A0; GHz&x002F; mW。交换结构的重新配置时间在上升沿和下降沿分别测得为1.2 x s和0.5 x s。双微环开关元件与多级架构一起,可在55&x00A0; GHz范围内保持端到端通带。我们通过具有不同数量的导通和截止谐振开关元件的光路来验证开关性能-对于32&x00A0; Gbps的所有数据路由,获得小于2&x00A0; dB的功率损失。

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