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机译:采用55 nm SiGe BiCMOS的70 Gb / s低功耗直流耦合NRZ差分电吸收调制器驱动器
Univ Ghent, IDLab, Dept Informat Technol, IMEC, B-9052 Ghent, Belgium;
Univ Ghent, IDLab, Dept Informat Technol, IMEC, B-9052 Ghent, Belgium;
Univ Ghent, IDLab, Dept Informat Technol, IMEC, B-9052 Ghent, Belgium;
Univ Ghent, IDLab, Dept Informat Technol, IMEC, B-9052 Ghent, Belgium;
IMEC, B-3001 Leuven, Belgium;
IMEC, B-3001 Leuven, Belgium;
IMEC, B-3001 Leuven, Belgium;
Univ Ghent, IDLab, Dept Informat Technol, IMEC, B-9052 Ghent, Belgium;
Univ Ghent, IDLab, Dept Informat Technol, IMEC, B-9052 Ghent, Belgium;
Univ Ghent, IDLab, Dept Informat Technol, IMEC, B-9052 Ghent, Belgium;
DC-coupled; differential; driver; EAM; low power; modulator bias;
机译:紧凑的低功耗40GBit / s调制器驱动器,在0.25m SiGe BiCMOS中具有6V差分输出摆幅
机译:在0.25μmSiGe:C BiCMOS中与单片集成硅调制器一起实现了10 Gb / s 5 V-pp和5.6 V-pp驱动器
机译:具有0.25?m SiGe:C BiCMOS的10 Gb / s 5 Vpp或5.6 Vpp驱动器的单片集成硅调制器
机译:用于单通道100 Gb / s NRZ硅光子调制器的55 nm SiGe BiCMOS高速相位调制器驱动器单元
机译:全球和地方气候数据在评估流行病爆发的环境驱动因素方面的不同影响
机译:单片集成硅调制器,内置10Gb / s 5Vpp或5.6Vpp驱动器,采用0.25µ m siGe:C BiCmOs