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首页> 外文期刊>Journal of Lightwave Technology >70 Gb/s Low-Power DC-Coupled NRZ Differential Electro-Absorption Modulator Driver in 55 nm SiGe BiCMOS
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70 Gb/s Low-Power DC-Coupled NRZ Differential Electro-Absorption Modulator Driver in 55 nm SiGe BiCMOS

机译:采用55 nm SiGe BiCMOS的70 Gb / s低功耗直流耦合NRZ差分电吸收调制器驱动器

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摘要

We present a 70 Gb/s capable optical transmitter consisting of a 50 mu m long GeSi electro-absorption modulator (integrated in silicon photonics) and a fully differential driver designed in a 55 nm SiGe BiCMOS technology. By properly unbalancing the output stage, the driver can be dc-coupled to the modulator thus avoiding the use of on-chip or external bias-Ts. At a wavelength of 1560 nm, open eye diagrams for 70 Gb/s after transmission over 2 km standard single-mode fiber were demonstrated. The total power consumption is 61 mW, corresponding to 0.87 pJ/b at 70 Gb/s. Bit-error rate measurements at 50 Gb/s and 56 Gb/s (performed both back to back and with up to 2 km standard single-mode fiber) demonstrate large (0.4 UI at a BER of 10(-12)) horizontal eye margins. This optical transmitter is ideally suited for datacenter applications that require densely integrated transceivers with a low power consumption.
机译:我们提出了一种具有70​​ Gb / s能力的光发射器,该发射器由一个50微米长的GeSi电吸收调制器(集成在硅光子学中)和一个采用55 nm SiGe BiCMOS技术设计的全差分驱动器组成。通过适当地平衡输出级,可以将驱动器直流耦合至调制器,从而避免使用片上或外部偏置T。在1560 nm的波长下,展示了在2 km标准单模光纤上传输后的70 Gb / s的睁眼图。总功耗为61 mW,相当于在70 Gb / s时为0.87 pJ / b。在50 Gb / s和56 Gb / s下进行的误码率测量(背靠背并使用最长2 km的标准单模光纤执行)显示出大眼图(0.4 UI,BER为10(-12)时)利润。该光发射器非常适合需要低功耗的密集集成收发器的数据中心应用。

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