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A reduced capacitance concept for high-speed optical position-sensitive devices (PSDs)

机译:高速光学位置敏感设备(PSD)的减小的电容概念

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摘要

Position-sensitive devices (PSDs) in which the junction capacitance is reduced by using a mesh-type resistive layer with 125- mu m pitch and 30- mu m stripwidth are discussed. The temporal responses to pulsed excitation illuminated at the center are characterized by a rise time of less than 550 ns, which is shorter than that of the conventional type. The 14-mm*14-mm PSD has a junction capacitance of less than 180 pF, which is estimated to be lower than that of a conventional-type PSD by a factor of 2.4. By suitably selecting the mesh pitch and width, it is possible to reduce the temporal response by one or two orders of magnitude.
机译:讨论了位置敏感器件(PSD),其中通过使用间距为125μm且条宽为30μm的网格型电阻层来减小结电容。对中心照射的脉冲激励的时间响应的特征是上升时间小于550 ns,比常规类型的上升时间短。 14mm * 14mm PSD的结电容小于180 pF,据估计,它比常规类型PSD的结电容低2.4倍。通过适当地选择网格间距和宽度,可以将时间响应减小一或两个数量级。

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