Direct write of resistive lines on SiC

摘要

The optimal parameters of a nanosecond pulsed laser for writing of tracks of controlled resistance onto high resistivity silicon carbide were investigated. A controlled energy deposition approach was carried out to minimize changes to the surface topography. The effect of fluence and irradiance on the ability to write narrow lines with controlled resistance were the explored parameters. Two focal length lenses and a large range of fluences were chosen to determine the best parameters to achieve controlled resistance. The experimental results indicate that both the beam fluence and irradiance have a significant effect on achieving an optimal resistance range.