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High Knudsen Number Physical Vapor Deposition: Predicting Deposition Rates and Uniformity

机译:高克努森数物理气相沉积:预测沉积速率和均匀性

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The problem of predicting deposition rates and film thickness variation is relevant to many high-vacuum physical vapor deposition (PVD) processes. Analytical methods for modeling the molecular flow fail when the geometry is more complicated than simple tubular or planar sources. Monte Carlo methods, which have traditionally been used for modeling PVD processes in more complicated geometries, being probabilistic in nature, entail long computation times, and thus render geometry optimization for deposition uniformity a difficult task. Free molecular flow is governed by the same line-of-sight considerations as thermal radiation. Though the existence of an analogy between the two was recognized by Knudsen (1909, Ann. Phys., 4(28), pp. 75-130) during his early experiments, it has not been exploited toward mainstream analysis of deposition processes. With the availability of commercial finite element software having advanced geometry modelers and built-in cavity radiation solvers, the analysis of diffuse thermal radiation problems has become considerably simplified. Hence, it is proposed to use the geometry modeling and radiation analysis capabilities of commercial finite element software toward analyzing and optimizing high-vacuum deposition processes by applying the radiation-molecular flow analogy. In this paper, we lay down this analogy and use the commercial finite element software ABAQUS for predicting radiation flux profiles from planar as well as tube sources. These profiles are compared to corresponding deposition profiles presented in thin-film literature. In order to test the ability of the analogy in predicting absolute values of molecular flow rates, ABAQUS was also employed for calculating the radiative flux through a long tube. The predictions are compared to Knudsen's analytical formula for free molecular flow through long tubes. Finally, in order to see the efficacy of using the analogy in modeling the film thickness variation in a complex source-substrate configuration, an experiment was conducted where chromium films were deposited on an asymmetric arrangement of glass slides in a high-vacuum PVD chamber. The thickness of the deposited films was measured and the source-substrate configuration was simulated in ABAQUS. The variation of radiation fluxes from the simulation was compared to variation of the measured film thicknesses across the slides. The close agreement between the predictions and experimental data establishes the feasibility of using commercial finite element software for analyzing high vacuum deposition processes.
机译:预测沉积速率和膜厚变化的问题与许多高真空物理气相沉积(PVD)工艺有关。当几何结构比简单的管状或平面源复杂时,用于建模分子流的分析方法将失败。蒙特卡洛方法传统上已用于在更复杂的几何形状中对PVD过程进行建模,本质上是概率性的,需要较长的计算时间,因此使用于沉积均匀性的几何优化最困难。自由分子流受与热辐射相同的视线考虑。尽管Knudsen(1909,Ann。Phys。,4(28),pp。75-130)在他的早期实验中就认识到两者之间存在类比,但尚未将其用于沉积过程的主流分析。随着具有先进的几何建模器和内置腔辐射求解器的商业有限元软件的推出,对扩散热辐射问题的分析已大大简化。因此,建议利用商业有限元软件的几何建模和辐射分析功能,通过应用辐射-分子流模拟法来分析和优化高真空沉积过程。在本文中,我们给出了这种类比,并使用商业有限元软件ABAQUS来预测平面和管源的辐射通量剖面。将这些轮廓与薄膜文献中提供的相应沉积轮廓进行比较。为了测试类比预测分子流速绝对值的能力,ABAQUS还用于计算通过长管的辐射通量。将该预测结果与Knudsen的分析公式进行比较,以使自由分子流过长管。最后,为了了解在类比复杂的源-基板配置中使用该类比法模拟膜厚变化的功效,进行了一项实验,其中在高真空PVD室中将铬膜沉积在玻璃载片的不对称排列上。测量了沉积膜的厚度,并在ABAQUS中模拟了源-衬底结构。将模拟中的辐射通量变化与载玻片上测得的薄膜厚度变化进行比较。预测和实验数据之间的密切一致性建立了使用商业有限元软件分析高真空沉积过程的可行性。

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